The temperature induced current transport characteristics in the orthoferrite YbFeO3− δ thin film/p-type Si structure
The perovskite ytterbium ferrite is a new ferroelectric semiconductor material. We presented
the temperature induced current–voltage (I–V) characteristics of the Al/YbFeO 3− δ/p-Si/Al …
the temperature induced current–voltage (I–V) characteristics of the Al/YbFeO 3− δ/p-Si/Al …
The electrical and dielectric properties of the magnetite nanoparticles supported graphene-oxide/n-Si MOS type device that operates across a wide temperature range
I Gumus, S Aydogan - Sensors and Actuators A: Physical, 2021 - Elsevier
In this paper, the Fe 3 O 4 nanoparticles doped-GO film was coated on the Si wafer by spin
coating method. SEM, TEM and EDX measurements were carried out for morphological and …
coating method. SEM, TEM and EDX measurements were carried out for morphological and …
Temperature and voltage dependence C–V and G/ω–V characteristics in Au/n-type GaAs metal–semiconductor structures and the source of negative capacitance
Ş KARATAŞ - Journal of Materials Science: Materials in Electronics, 2021 - Springer
To investigation the phenomena of negative capacitance, we examined the capacitance–
voltage (C–V), conductance–voltage (G/ω–V), and series resistance–voltage (RS–V) …
voltage (C–V), conductance–voltage (G/ω–V), and series resistance–voltage (RS–V) …
Illumination intensities effect on electronic properties of Fe–Ni–Mn/p-Si Schottky diode
E Aldirmaz, M Güler, E Güler - Journal of Materials Science: Materials in …, 2022 - Springer
In this study, a Schottky diode was produced on a p-type Si semiconductor using
Fe69Ni27Mn4 (wt%) alloy. Scanning electron microscopy, X-ray diffraction, and differential …
Fe69Ni27Mn4 (wt%) alloy. Scanning electron microscopy, X-ray diffraction, and differential …
Analysis of I–V–T Characteristics of Au/n-InP Schottky Barrier Diodes with Modeling of Nanometer-Sized Patches at Low Temperature
The current–voltage (I–V) characteristics of inhomogeneous Au/n-InP Schottky barrier (SB)
diodes have been investigated in the temperature range of 100 K to 300 K, and detailed …
diodes have been investigated in the temperature range of 100 K to 300 K, and detailed …
[PDF][PDF] Extraction of the electrical parameters of the Au/InSb/InP Schottky diode in the temperature range (300 K-425 K)
A Sadoun, I Kemerchou - International Journal of Energetica (IJECA), 2020 - core.ac.uk
In this work, we have presented a theoretical study of Au/InSb/InP Schottky diode based on
current-voltage (IV) measurement in the temperature range (300 K-425 K). Electrical …
current-voltage (IV) measurement in the temperature range (300 K-425 K). Electrical …
THE CHARACTERISTIC DIODE PARAMETERS IN Ti/-InP CONTACTS PREPARED BY DC SPUTTERING AND EVAPORATION PROCESSES OVER A WIDE …
The titanium/p-indium phosphide (Ti/p-InP) Schottky diodes (SDs) have been prepared by
thermal evaporation and DC magnetron sputtering deposition. Then, their current–voltage (I …
thermal evaporation and DC magnetron sputtering deposition. Then, their current–voltage (I …
[PDF][PDF] Investigation, analysis and comparison of current-voltage characteristics for Au/Ni/GaN Schottky structure using IVT simulation
A Sadoun, S Mansouri, M Chellali, N Lakhdar… - Mater. Sci …, 2019 - intapi.sciendo.com
The group III-VN wide band gap semiconductors have attracted significant interest owing to
the unique characteristics and their applications in microelectronic and optoelectronic …
the unique characteristics and their applications in microelectronic and optoelectronic …
[PDF][PDF] Hafnium dioxide effect on the electrical properties of M/n-GaN structure
S Ali, M Sedik, C Mohammed… - Materials Science …, 2020 - intapi.sciendo.com
The III-V semiconductors family is widely used in manufacturing of electronic components
such as Schottky diodes (MS), metalinsulator-semiconductor (MIS) and metal …
such as Schottky diodes (MS), metalinsulator-semiconductor (MIS) and metal …
Effect of Introduction Layers of Native Oxide, InN, and InSb on the Electrical Characterization of the Au/n-InP
A Sadoun - 2024 - essuir.sumdu.edu.ua
Our study examined how native oxide layers, InN and InSb, affected the current-voltage and
capacitance-voltage characteristics of the Au/n-InP Schottky diode at a temperature of 300 K …
capacitance-voltage characteristics of the Au/n-InP Schottky diode at a temperature of 300 K …