Vertical GaN Schottky barrier diode with record low contact resistivity on N-polarity using ultrathin ITO interfacial layer
X Liu, H Wang, J Wu, P Zou, Y Tu… - … on Electron Devices, 2023 - ieeexplore.ieee.org
In this article, an ohmic contact structure based on indium tin oxide (ITO)/Ti/Al/Ni/Au is
explored for high-performance GaN-on-GaN Schottky barrier diode (SBD) for the first time …
explored for high-performance GaN-on-GaN Schottky barrier diode (SBD) for the first time …
Vertical GaN Schottky barrier diodes with ohmic contact on N-polar by the atomic layer deposition of aluminum oxide interfacial layer
Y Yang, Z Ma, Z Jiang, B Li, L Gao, S Li, Q Lin… - Applied Surface …, 2025 - Elsevier
In this paper, high-performance vertical GaN on GaN Schottky Barrier Diodes (SBDs) on 2-
inch free-standing (FS)-GaN is presented with the specific on-state resistance (R on) of 1.34 …
inch free-standing (FS)-GaN is presented with the specific on-state resistance (R on) of 1.34 …
Impact of relative gate position on DC and RF characteristics of high performance AlGaN/GaN HEMTs
We have investigated the impact of relative gate position between source and drain on the
DC and RF characteristics for AlGaN/GaN high electron mobility transistors. Devices with …
DC and RF characteristics for AlGaN/GaN high electron mobility transistors. Devices with …
Surface stoichiometry modification and improved DC/RF characteristics by plasma treated and annealed AlGaN/GaN HEMTs
We demonstrate that N 2 and O 2 plasma treatment followed by rapid thermal annealing
leads to surface stoichiometry modification in a AlGaN/GaN high electron mobility transistor …
leads to surface stoichiometry modification in a AlGaN/GaN high electron mobility transistor …
Effect of surface stoichiometry on the non-alloyed ohmic contact to N-face n-GaN
R Zhou, M Feng, J Wang, Y Zhong, Q Sun, J Liu… - Solid-State …, 2020 - Elsevier
This letter reports a systematic study about the effect of surface stoichiometry induced by
inductively coupled plasma (ICP) etching on the ohmic contact to N-face n-GaN. It is found …
inductively coupled plasma (ICP) etching on the ohmic contact to N-face n-GaN. It is found …
Polarization dependent charge control model for microwave performance assessment of AlGaN/GaN/AlGaN double heterostructure HEMTs
An accurate polarization dependent charge control-based analytical model is proposed for
microwave performance assessment of Al _ 0.15 Ga _ 0.85 N/GaN/Al _ 0.15 Ga _ 0.85 N Al …
microwave performance assessment of Al _ 0.15 Ga _ 0.85 N/GaN/Al _ 0.15 Ga _ 0.85 N Al …
Performance improvement in NiO x-based GaN MOS-HEMTs
We have illustrated the thermal oxidation of Ni as gate dielectrics to improve the
characteristics of GaN-based metal oxide semiconductor high electron mobility transistors …
characteristics of GaN-based metal oxide semiconductor high electron mobility transistors …
Performance improvement and better scalability of wet-recessed and wet-oxidized AlGaN/GaN high electron mobility transistors
We have demonstrated that a thin layer of Al 2 O 3 grown by wet-oxidation of wet-recessed
AlGaN barrier layer in an AlGaN/GaN heterostructure can significantly improve the …
AlGaN barrier layer in an AlGaN/GaN heterostructure can significantly improve the …
Effect of GaN cap layer towards ohmic contact of open-gate Cr AlGaN/GaN high electron mobility transistor
Metal-organic chemical vapour deposition (MOCVD) was used to grow AlGaN/GaN high
electron mobility transistor (HEMT) on a sapphire substrate with different thicknesses of the …
electron mobility transistor (HEMT) on a sapphire substrate with different thicknesses of the …
Fringe field control of one‐dimensional room temperature sub‐band resolved quantum transport in site controlled AlGaN/GaN lateral nanowires
AS Kumar, D Khachariya, M Meer… - … status solidi (a), 2017 - Wiley Online Library
We have demonstrated effective fringe field control of one‐dimensional electron gas (1‐
DEG) in AlGaN/GaN lateral nanowires. The nanowires are site controlled and formed by a …
DEG) in AlGaN/GaN lateral nanowires. The nanowires are site controlled and formed by a …