Ultra-wide bandgap materials show great promise as a solution to some of the limitations of
current state of the art semiconductor technology. Among these, diamond has exhibited …

Diamond is known as an ultimate material because of its superior properties and it is
expected to be employed in next-generation power electronic devices. Progress in epitaxial …

Many gadgets in our daily life work on the photodetection principle. These photodetectors
(such as silicon (Si), gallium arsenide (GaAs), and indium gallium arsenide (InGaAs)) work …

Abstract Using nitrogen-dioxide (NO 2) adsorption treatment and Al 2 O 3 passivation
technique, we improved drain current (I DS) of hydrogen-terminated (H-terminated) diamond …

The physical and chemical properties of wide bandgap semiconductors silicon carbide and
diamond make these materials an ideal choice for device fabrication for applications in …

Progress in power electronic devices is currently accepted through the use of wide bandgap
materials (WBG). Among them, diamond is the material with the most promising …

This letter reports the small-signal and large-signal performances at high drain voltage (V
DS) ranging up to 60 V for a 0.5 μm gate length two-dimensional hole gas diamond metal …

The prospects and limits of diamond power devices incorporating boron as dopant are
discussed using the results of a theoretical/empirical analysis coupled to 2D-numerical …

Metal semiconductor field-effect transistors (MESFETs) or metal oxide semiconductor FETs
(MOSFETs) can be fabricated on hydrogen-terminated diamond without losing the surface …

Hydrogen termination of diamond lowers its ionization energy, driving electron transfer from
the valence band into an adsorbed water layer or to a strong molecular acceptor. This gives …