A new generation of high-efficiency power devices is being developed using wide bandgap
(WBG) semiconductors, like GaN and SiC, which are emerging as attractive alternatives to …

This paper furnishes a Comprehensive study about an emerging GaN HEMT technology
suitable for RF and high power applications. It plays a vital role in Wireless communication …

Recent years have witnessed GaN-based devices delivering their promise of
unprecedented power and frequency levels and demonstrating their capability as an able …

We report a high-performance vertical GaN-on-GaN Schottky barrier diode (SBD) with a
planar nitridation-based termination (NT) technique. The developed NT-SBD with nearly …

In this work, by controlling the oxygen flow rate (OFR)(from 0% to 30%), we suggest using a
p-type copper aluminum oxide (p-CuAlO 2) interlayer to enhance the high breakdown and …

For high electron mobility transistors (HEMTs) power transistors based on AlGaN/GaN
heterojunction, p-GaN gate has been the gate topology commonly used to deplete the two …

Low-current-collapse normally OFF GaN-on-Si MIS high-electron-mobility transistors (MIS-
HEMTs) are fabricated with low-pressure chemical-vapor-deposited SiN x (LPCVD-SiN x) …

We report the interface characterization of Al 2 O 3/AlN/GaN MOS (metal-oxide-
semiconductor) structures with an AlN interfacial layer. A thin monocrystal-like interfacial …

Developing effective technique to protect the etched-GaN surface from the degradation in a
high-temperature (ie, at~ 780° C) process, such as low-pressure chemical vapor deposition …

In this letter, silicon nitride (SiN x) film deposited at 780° C by low-pressure chemical vapor
deposition (LPCVD) was employed as gate dielectric for GaN-based metal–insulator …