Graphene and two-dimensional materials for optoelectronic applications
This article reviews optoelectronic devices based on graphene and related two-dimensional
(2D) materials. The review includes basic considerations of process technology, including …
(2D) materials. The review includes basic considerations of process technology, including …
A graphene-silicon Schottky photodetector with graphene oxide interlayer
Y Wang, S Yang, DR Lambada, S Shafique - Sensors and Actuators A …, 2020 - Elsevier
A photodetector based on graphene-silicon Schottky diode with graphene oxide (GO)
interlayer was prepared in this research. The GO interlayer suppressed the dark current, and …
interlayer was prepared in this research. The GO interlayer suppressed the dark current, and …
Zero Bias Operation: Photodetection Behaviors Obtained by Emerging Materials and Device Structures
Zero-biased photodetectors have desirable characteristics for potentially next-generation
devices, including high efficiency, rapid response, and low power operation. In particular …
devices, including high efficiency, rapid response, and low power operation. In particular …
Graphene–silicon Schottky diodes for photodetection
A Di Bartolomeo, G Luongo, L Iemmo… - IEEE Transactions …, 2018 - ieeexplore.ieee.org
We present the optoelectronic characterization of graphene/silicon Schottky junctions,
fabricated by transferring CVD-graphene on flat and nanotip-patterned n-and p-type Si …
fabricated by transferring CVD-graphene on flat and nanotip-patterned n-and p-type Si …
WSe2 Homojunction p–n Diode Formed by Photoinduced Activation of Mid-Gap Defect States in Boron Nitride
A single nanoflake lateral p–n diode (in-plane) based on a two-dimensional material can
facilitate electronic architecture miniaturization. Here, a novel lateral homojunction p–n …
facilitate electronic architecture miniaturization. Here, a novel lateral homojunction p–n …
The fabrication of Schottky photodiode by monolayer graphene direct-transfer-on-silicon
Y Wang, S Yang, A Ballesio, M Parmeggiani… - Journal of Applied …, 2020 - pubs.aip.org
A two-step hot embossing process was used to transfer graphene and to fabricate Gr/Si
Schottky photodiodes. As a direct graphene transfer technique through a hot embossing …
Schottky photodiodes. As a direct graphene transfer technique through a hot embossing …
Progress on crystal growth of two-dimensional semiconductors for optoelectronic applications
Two-dimensional (2D) semiconductors are thought to belong to the most promising
candidates for future nanoelectronic applications, due to their unique advantages and …
candidates for future nanoelectronic applications, due to their unique advantages and …
Adsorbate-induced enhancement of the spectral response in graphene/silicon-based Schottky barrier photodetectors
The impact of atmospheric adsorbates on the spectral response and response speed of p-
type graphene/n-type Silicon (p-Gr/n-Si) based Schottky barrier photodetectors are …
type graphene/n-type Silicon (p-Gr/n-Si) based Schottky barrier photodetectors are …
Simulations of graphene base transistors with improved graphene interface model
V Di Lecce, A Gnudi, E Gnani… - IEEE Electron …, 2015 - ieeexplore.ieee.org
A simulation study of the graphene base heterojunction transistor (GBHT) is presented
based on a novel realistic graphene-Si interface model, calibrated on the experimental …
based on a novel realistic graphene-Si interface model, calibrated on the experimental …
Growth of oxidation-resistive silicene-like thin flakes and Si nanostructures on graphene
We report the growth of Si nanostructures, either as thin films or nanoparticles, on graphene
substrates. The Si nanostructures are shown to be single crystalline, air stable and oxidation …
substrates. The Si nanostructures are shown to be single crystalline, air stable and oxidation …