The reliability of semiconductor materials with electrical and optical properties are
connected to their structures. The elastic strain field and tilt analysis of the crystal lattice …

Ge vertical heterostructures grown on deeply-patterned Si (001) were first obtained in 2012
(CV Falub et al., Science 2012, 335, 1330–1334), immediately capturing attention due to the …

A perfectly compliant substrate would allow the monolithic integration of high-quality
semiconductor materials such as Ge and III-V on Silicon (Si) substrate, enabling novel …

The development of three-dimensional architectures in semiconductor technology is paving
the way to new device concepts for various applications, from quantum computing to single …

X-ray Bragg coherent diffraction imaging is a powerful technique for operando and in situ
materials characterization and provides a unique means of quantifying the influence of one …

Silicon nanowire-based sensors find many applications in micro-and nano-
electromechanical systems, thanks to their unique characteristics of flexibility and strength …

This work presents a new approach suitable for mapping reciprocal space in three
dimensions with standard laboratory equipment and a typical X-ray diffraction setup. The …

Using the formalism of dynamical scattering of spatially restricted X-ray fields, the diffraction
of a microbeam in a crystal with boundary functions for the incident and reflected amplitudes …

This work investigates layers of densely spaced SiGe microcrystals epitaxially formed on
patterned Si and grown up to extreme heights of 40 and 100 µm using the rocking curve …

Epitaxial growth of dissimilar materials on patterned substrates is a promising technique for
defect-free, monolithic integration of various optoelectronic devices on a single chip. In this …