Magnetron sputtered tungsten di-sulfide: An efficient battery grade electrode for supercapattery devices

S Alam, MZ Iqbal, N Amjad, R Ali, M Alzaid - Journal of Energy Storage, 2022 - Elsevier
Tungsten disulfide (WS 2) due to its layered structure and high capacitance is an attractive
electrode material for supercapattery application. In this study, different thickness of WS 2 is …

Tailoring the interface magnetron sputtered silver/tungsten disulfide for battery-supercapacitor hybrids: Electrochemical assessment of redox activity

MZ Iqbal, MW Khan, S Siddique, S Aftab… - Journal of Energy …, 2023 - Elsevier
The emergence of two-dimensional transition metal dichalcogenides as a promising
material has attracted significant interest in its potential applications. Also, there is a dire …

WSe2/graphene heterojunction synaptic phototransistor with both electrically and optically tunable plasticity

Y Sun, Y Lin, A Zubair, D Xie, T Palacios - 2D Materials, 2021 - iopscience.iop.org
The imitation of synaptic plasticity in artificial neuromorphic devices has been widely
realized based on memristors, transistors and ion devices. This development of artificial …

[HTML][HTML] Tailoring the interfacial surfaces of tungsten and molybdenum tungsten disulfide electrodes for hybrid supercapacitors

M Alzaid, MZ Iqbal, B Alqahtani, R Alanazi… - RSC …, 2023 - pubs.rsc.org
The layered structures of tungsten disulfide (WS2) and molybdenum tungsten disulfide
(MoWS2) are considered as the most promising electrode materials for energy storage …

Tunable Schottky contact in the graphene/WSe2 (1− x) O2x heterostructure by asymmetric O doping

R Zhang, G Hao, X Ye, W Zhang, H Li - Journal of Applied Physics, 2021 - pubs.aip.org
Tuning the electrical transport properties of a nanoelectronic device with a p-type Schottky
contact remains a grand challenge. To solve this issue, we explore the effectiveness of …

[HTML][HTML] Fabrication and Characterization of MoS2/h-BN and WS2/h-BN Heterostructures

T Han, H Liu, S Chen, Y Chen, S Wang, Z Li - Micromachines, 2020 - mdpi.com
The general preparation method of large-area, continuous, uniform, and controllable vdW
heterostructure materials is provided in this paper. To obtain the preparation of MoS2/h-BN …

Ultraviolet light induced electrical hysteresis effect in graphene-GaN heterojunction

AK Ranade, RD Mahyavanshi, P Desai, M Kato… - Applied Physics …, 2019 - pubs.aip.org
Fabrication of a two-and three-dimensional (2D/3D) heterojunction device has attracted
significant attention for developing high performance photodiodes, light emitting diodes …

Photoinduced hysteresis of graphene field-effect transistors due to hydrogen-complexed defects in silicon dioxide

G Cao, X Liu, Y Zhang, W Liu, M Deng… - … applied materials & …, 2019 - ACS Publications
Photoinduced hysteresis (PIH) of graphene field-effect transistors (G-FETs) has attracted
attention because of its potential in developing photoelectronic or nonvolatile memory …

Ultraviolet-light-driven photoresponse of chemical vapor deposition grown molybdenum disulfide/graphene heterostructured FET

MZ Iqbal, S Khan, S Siddique - Applied Surface Science, 2018 - Elsevier
Two dimensional materials such as graphene and transition metal dichalcogenides (TMDC)
have gained profound research interest as novel optical material owing to their remarkable …

Ultraviolet-light-driven enhanced photoresponse of chemical-vapor-deposition grown graphene-WS2 heterojunction based FETs

S Siddique, MZ Iqbal, MW Iqbal, S Khan - Sensors and Actuators B …, 2018 - Elsevier
Graphene and transition metal dichalcogenides (TMDCs), an emerging class of two-
dimensional (2D) materials exhibiting excellent electrical and optical properties have shown …