Abstract Gallium oxide (Ga 2 O 3) is rapidly emerging as a material of choice for the
development of solar blind photodetectors and power electronic devices which are …

Gallium oxide, as an emerging semiconductor, has attracted a lot of attention among
researchers due to its high band gap (4.8 eV) and a high critical field with the value of 8 …

The structural, electronic, and optical properties of β-Ga2O3 with oxygen vacancies are
studied by employing first-principles calculations based on density function theory. Based on …

Wide-bandgap semiconductors (WBG) are expected to be applied to solid-state lighting and
power devices, supporting a future energy-saving society. Here we present evidence of p …

This Perspective seeks to understand and assess why ultrawide bandgap (UWBG)
semiconductor-based deep-UV photodetectors have not yet found any noticeable presence …

The reliable, selective, and fast detection of the inorganic and organic gases in indoor and
outdoor air and industrial processes is a huge challenge for environmental sustainability …

Gallium nitride nanowires and β-Ga 2 O 3 nanowires were prepared by chemical vapor
deposition. A solar-blind ultraviolet detector was fabricated based on β-Ga 2 O 3/GaN …

We investigated the compensation mechanism between N acceptors and native defects in β-
Ga 2 O 3 by employing the approach of pseudopotential plane-wave under the density …

This paper presents the synthesis of wide bandgap Ga2O3 thin films on differently oriented
sapphire substrates by using low pressure chemical vapor deposition (LPCVD) technique …

In this manuscript, the effects of intrinsic defects on the electronic and optical properties of
aluminum-doped β-Ga 2 O 3 are investigated with first-principles calculations. Four types of …