RF transistors: Recent developments and roadmap toward terahertz applications
F Schwierz, JJ Liou - Solid-State Electronics, 2007 - Elsevier
This paper provides an overview on the status, development and performance of current and
future RF transistors. The targets specified in the 2005 issue and the 2006 update of the …
future RF transistors. The targets specified in the 2005 issue and the 2006 update of the …
A 0.65 THz focal-plane array in a quarter-micron CMOS process technology
A focal-plane array (FPA) for room-temperature detection of 0.65-THz radiation has been
fully integrated in a low-cost 0.25 mum CMOS process technology. The circuit architecture is …
fully integrated in a low-cost 0.25 mum CMOS process technology. The circuit architecture is …
Automotive radar-status and perspectives
J Wenger - … Integrated Circuit Symposium, 2005. CSIC'05., 2005 - ieeexplore.ieee.org
After introduction of the first radar based autonomous cruise control (ACC) system in the
Mercedes S-class in 1999, ACC is meanwhile available from many OEMs in high and mid …
Mercedes S-class in 1999, ACC is meanwhile available from many OEMs in high and mid …
A 0.13 SiGe BiCMOS Technology Featuring f/f of 240/330 GHz and Gate Delays Below 3 ps
H Rücker, B Heinemann, W Winkler… - IEEE Journal of Solid …, 2010 - ieeexplore.ieee.org
A 0.13 μm SiGe BiCMOS technology for millimeter-wave applications is presented. This
technology features high-speed HBTs with peak transit frequencies f T of 240 GHz …
technology features high-speed HBTs with peak transit frequencies f T of 240 GHz …
[图书][B] The VLSI handbook
WK Chen - 1999 - taylorfrancis.com
Over the years, the fundamentals of VLSI technology have evolved to include a wide range
of topics and a broad range of practices. To encompass such a vast amount of knowledge …
of topics and a broad range of practices. To encompass such a vast amount of knowledge …
A 20 dBm fully-integrated 60 GHz SiGe power amplifier with automatic level control
UR Pfeiffer, D Goren - IEEE Journal of Solid-State Circuits, 2007 - ieeexplore.ieee.org
A+ 20 dBm power amplifier (PA) for applications in the 60 GHz industrial scientific medical
(ISM) band is presented. The PA is fabricated in a 0.13-mum SiGe BiCMOS process …
(ISM) band is presented. The PA is fabricated in a 0.13-mum SiGe BiCMOS process …
[图书][B] Compact hierarchical bipolar transistor modeling with HICUM
M Schröter, A Chakravorty - 2010 - World Scientific
Compact Hierarchical Bipolar Transistor Modeling with HiCUM will be of great practical
benefit to professionals from the process development, modeling and circuit design …
benefit to professionals from the process development, modeling and circuit design …
Development of future short range radar technology
KM Strohm, HL Bloecher, R Schneider… - … , 2005. EURAD 2005., 2005 - ieeexplore.ieee.org
First cars equipped with 24 GHz short range radar (SRR) systems in combination with 77
GHz long range radar (LRR) system enter the market in autumn 2005 enabling new safety …
GHz long range radar (LRR) system enter the market in autumn 2005 enabling new safety …
A 23-dBm 60-GHz distributed active transformer in a silicon process technology
UR Pfeiffer, D Goren - IEEE Transactions on Microwave Theory …, 2007 - ieeexplore.ieee.org
In this paper, a distributed active transformer for the operation in the millimeter-wave
frequency range is presented. The transformer utilizes stacked coupled wires as opposed to …
frequency range is presented. The transformer utilizes stacked coupled wires as opposed to …
Physical and electrical performance limits of high-speed SiGeC HBTs—Part I: Vertical scaling
M Schroter, G Wedel, B Heinemann… - … on Electron Devices, 2011 - ieeexplore.ieee.org
The overall purpose of this paper (including Part I, in this issue) is the prediction of the
ultimate electrical high-frequency performance potential for SiGeC heterojunction bipolar …
ultimate electrical high-frequency performance potential for SiGeC heterojunction bipolar …