Gallium oxide solar-blind ultraviolet photodetectors: a review

J Xu, W Zheng, F Huang - Journal of Materials Chemistry C, 2019 - pubs.rsc.org
In recent years, solar-blind ultraviolet (UV) photodetectors have attracted significant attention
from researchers in the field of semiconductor devices due to their indispensable properties …

Recent progress in solar‐blind deep‐ultraviolet photodetectors based on inorganic ultrawide bandgap semiconductors

C Xie, XT Lu, XW Tong, ZX Zhang… - Advanced Functional …, 2019 - Wiley Online Library
Due to its significant applications in many relevant fields, light detection in the solar‐blind
deep‐ultraviolet (DUV) wavelength region is a subject of great interest for both scientific and …

[HTML][HTML] Vacuum-ultraviolet photodetectors

L Jia, W Zheng, F Huang - PhotoniX, 2020 - Springer
High-performance vacuum-ultraviolet (VUV) photodetectors are of great significance to
space science, radiation monitoring, electronic industry and basic science. Due to the …

Recent advances in ultraviolet photodetectors

Z Alaie, SM Nejad, MH Yousefi - Materials Science in Semiconductor …, 2015 - Elsevier
In recent years, ultraviolet (UV) photodetectors (PDs) have received much attention in the
various field of research due to wide range of industrial, military, biological and …

Advances in synthesis and applications of boron nitride nanotubes: A review

T Xu, K Zhang, Q Cai, N Wang, L Wu, Q He… - Chemical Engineering …, 2022 - Elsevier
Boron nitride nanotubes (BNNTs) have attracted worldwide research interest since 1995
due to their excellent properties and a wide range of applications in numerous fields. The …

[HTML][HTML] Vacuum-ultraviolet photon detections

W Zheng, L Jia, F Huang - Iscience, 2020 - cell.com
Vacuum-ultraviolet (VUV) photon detection technology is an effective means for the
exploration in the field of space science (monitoring the formation and evolution of solar …

High-performance deep ultraviolet photodetectors based on few-layer hexagonal boron nitride

H Liu, J Meng, X Zhang, Y Chen, Z Yin, D Wang… - Nanoscale, 2018 - pubs.rsc.org
Hexagonal boron nitride (h-BN), an isomorph of graphene, has attracted great attention
owing to its potential applications as an ultra-flat substrate or gate dielectric layer in novel …

Efficient Assembly of Bridged β‐Ga2O3 Nanowires for Solar‐Blind Photodetection

Y Li, T Tokizono, M Liao, M Zhong… - Advanced Functional …, 2010 - Wiley Online Library
An increasing number of applications using ultraviolet radiation have renewed interest in
ultraviolet photodetector research. Particularly, solar‐blind photodetectors sensitive to only …

Cross‐Substitution Promoted Ultrawide Bandgap up to 4.5 eV in a 2D Semiconductor: Gallium Thiophosphate

Y Yan, J Yang, J Du, X Zhang, YY Liu, C Xia… - Advanced …, 2021 - Wiley Online Library
Exploring 2D ultrawide bandgap semiconductors (UWBSs) will be conductive to the
development of next‐generation nanodevices, such as deep‐ultraviolet photodetectors …

Ultrahigh Deep-Ultraviolet Responsivity of a β-Ga2O3/MgO Heterostructure-Based Phototransistor

J Ahn, J Ma, D Lee, Q Lin, Y Park, O Lee, S Sim… - ACS …, 2021 - ACS Publications
Deep-ultraviolet (DUV) photodetectors based on wide-band-gap semiconductors have
attracted significant interest across a wide range of applications in the industrial, biological …