Gallium nitride (GaN) devices are revolutionarily advancing the efficiency, frequency, and
form factor of power electronics. However, the material composition, architecture, and …

Power electronic systems have a great impact on modern society. Their applications target a
more sustainable future by minimizing the negative impacts of industrialization on the …

Vertical heterojunction NiO/β n-Ga 2 O/n+ Ga 2 O 3 rectifiers employing NiO layer extension
beyond the rectifying contact for edge termination exhibit breakdown voltages (VB) up to 4.7 …

Gallium nitride (GaN), a promising alternative semiconductor to Si, is widely used in
photoelectronic and electronic technologies. However, the vulnerability of the GaN surface is …

GaN high electron mobility transistors (HEMTs) have limited avalanche capability and
usually fail catastrophically in voltage overshoot up to their dynamic breakdown voltage (BV …

Hetero-epitaxial growth of GaN often leads to high density of threading dislocations, which
poses a significant challenge to the promotion of the performance of GaN-based devices. In …

High-electron-mobility transistors based on gallium nitride technology are the most recently
developed power electronics devices involved in power electronics applications. This article …

This article provides a comprehensive review of wide and ultrawide bandgap power
electronic semiconductor devices, comparing silicon (Si), silicon carbide (SiC), gallium …

The output capacitance () loss, a loss produced when the device's output capacitor is
charged and discharged, has become a concern for GaN high electron mobility transistors …

Breakdown voltage (BV) is arguably one of the most critical parameters for power devices.
While avalanche breakdown is prevailing in silicon and silicon carbide devices, it is lacking …