Science and technology of high-dielectric constant (K) thin films for next generation CMOS
The microelectronic revolution of the 20*^ Century has been based on silicon because of its
exceptional electrical properties and an innate superior insulator, Si02, which enabled the …
exceptional electrical properties and an innate superior insulator, Si02, which enabled the …
Giant dielectric constant in Al2O3/TiO2 multilayer films synthesized by atomic layer deposition
T Tsujita, Y Morita, M Nishitani - MRS Advances, 2018 - Springer
Multilayer films formed from Al 2 O 3 and TiO 2 by atomic layer deposition were
systematically studied. The relationship between the electrical characteristics of the films …
systematically studied. The relationship between the electrical characteristics of the films …
[PDF][PDF] High-Permittivity Dielectrics and High Mobility Semiconductors for Future Scaled Technology: Hf-based High-K Gate Dielectrics and Interface Engineering for …
The aggressive scaling of CMOS devices is driving SiO2-based gate dielectric to its physical
limits. Currently, the Hf-based high permittivity (or κ) materials such as HfO2, HfSiO and …
limits. Currently, the Hf-based high permittivity (or κ) materials such as HfO2, HfSiO and …
[图书][B] Charge trapping study of hafnium-based gate dielectrics for advanced CMOS technology
L Song - 2008 - search.proquest.com
In order to reduce the large gate leakage current when scaling SiO 2 to its fundamental limit,
high-κ gate dielectrics need to be used in advanced CMOS technology. Among all the high-κ …
high-κ gate dielectrics need to be used in advanced CMOS technology. Among all the high-κ …
High-permittivity dielectrics and high mobility semiconductors for future scaled technology: Hafnium-based high-K gate dielectrics and interface engineering for …
N Lu - 2006 - search.proquest.com
For more than 40 years, MOS device technologies have been improving at a dramatic rate.
These technologies need to meet the requirements of performance (speed), low static (off …
These technologies need to meet the requirements of performance (speed), low static (off …
High-permittivity dielectrics and high mobility semiconductors for future scaled technology: Hf-based High-K gate dielectrics and interface engineering for HfO₂/Ge …
N Lu - 2006 - repositories.lib.utexas.edu
For more than 40 years, MOS device technologies have been improving at a dramatic rate.
These technologies need to meet the requirements of performance (speed), low static (off …
These technologies need to meet the requirements of performance (speed), low static (off …