Thermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspective
Power semiconductor devices are fundamental drivers for advances in power electronics,
the technology for electric energy conversion. Power devices based on wide-bandgap …
the technology for electric energy conversion. Power devices based on wide-bandgap …
Phonon thermal transport and its tunability in GaN for near-junction thermal management of electronics: A review
The heat dissipation issue has now become one of the most important bottlenecks for power
electronics due to the rapid increase in power density and working frequency. Towards the …
electronics due to the rapid increase in power density and working frequency. Towards the …
Interfacial thermal conductance across room-temperature-bonded GaN/diamond interfaces for GaN-on-diamond devices
The wide bandgap, high-breakdown electric field, and high carrier mobility makes GaN an
ideal material for high-power and high-frequency electronics applications, such as wireless …
ideal material for high-power and high-frequency electronics applications, such as wireless …
A review of GaN HEMT broadband power amplifiers
KH Hamza, D Nirmal - AEU-International Journal of Electronics and …, 2020 - Elsevier
The unique material properties of GaN, wide bandgap, high thermal conductivity, high
breakdown voltage, high electron mobility and the device properties of GaN HEMT (High …
breakdown voltage, high electron mobility and the device properties of GaN HEMT (High …
Integration of boron arsenide cooling substrates into gallium nitride devices
Thermal management is critical in modern electronic systems. Efforts to improve heat
dissipation have led to the exploration of novel semiconductor materials with high thermal …
dissipation have led to the exploration of novel semiconductor materials with high thermal …
Diamond as the heat spreader for the thermal dissipation of GaN-based electronic devices
L Sang - Functional Diamond, 2022 - Taylor & Francis
With the increasing power density and reduced size of the GaN-based electronic power
converters, the heat dissipation in the devices becomes the key issue toward the real …
converters, the heat dissipation in the devices becomes the key issue toward the real …
Fabrication of GaN/diamond heterointerface and interfacial chemical bonding state for highly efficient device design
J Liang, A Kobayashi, Y Shimizu, Y Ohno… - Advanced …, 2021 - Wiley Online Library
The direct integration of gallium nitride (GaN) and diamond holds much promise for high‐
power devices. However, it is a big challenge to grow GaN on diamond due to the large …
power devices. However, it is a big challenge to grow GaN on diamond due to the large …
A critical review of thermal boundary conductance across wide and ultrawide bandgap semiconductor interfaces
The emergence of wide and ultrawide bandgap semiconductors has revolutionized the
advancement of next-generation power, radio frequency, and opto-electronics, paving the …
advancement of next-generation power, radio frequency, and opto-electronics, paving the …
Device-level thermal management of gallium oxide field-effect transistors
B Chatterjee, K Zeng, CD Nordquist… - IEEE Transactions …, 2019 - ieeexplore.ieee.org
The ultrawide bandgap (UWBG)(~ 4.8 eV) and melt-grown substrate availability of β-Ga 2 O
3 give promise to the development of next-generation power electronic devices with …
3 give promise to the development of next-generation power electronic devices with …
Reducing GaN-on-diamond interfacial thermal resistance for high power transistor applications
H Sun, RB Simon, JW Pomeroy, D Francis… - Applied Physics …, 2015 - pubs.aip.org
Integration of chemical vapor deposited polycrystalline diamond offers promising thermal
performance for GaN-based high power radio frequency amplifiers. One limiting factor is the …
performance for GaN-based high power radio frequency amplifiers. One limiting factor is the …