This paper studies the main low temperature electrical parameters of SOI n-and p-type
FinFETs, standard and strained devices, submitted to proton irradiation. The study covers …

In this work the influence of temperature on strained n-channel multiple gate devices after
proton irradiation is analyzed for two different splits: unstressed and highly stressed devices …

UTBB (ultra-thin body and ultra-thin buried oxide) technologies are highly competitive for
scaled technologies down to the 14 nm range. This paper reviews their potential for digital …

This paper studies the proton radiation influence on SOI FinFET analog parameters based
on the device inversion coefficient (IC). The analysis focuses on some figures of merit in …

This paper compares, for the first time, the total ionizing dose degradation of 600 keV proton-
irradiated silicon triple gate SOI tunnel FETs (TFETs) with SOI FinFETs fabricated with the …

Nesse trabalho de mestrado estudou-se o comportamento elétrico de transistores verticais
de múltiplas portas (3D) sobre isolante (SOI FinFET) sob o efeito da radiação de prótons em …

In this work, the influence of proton-irradiation in the voltage gain of two-stage operational
transconductance amplifier (OTA) designed with silicon-on-insulator (SOI) fin field effect …

This paper presents for the first time the study of proton radiation and strain influence on the
Zero Temperature Coefficient (ZTC) in SOI nFinFETs based on experimental data and …

This study presents an experimental analysis of the Xray radiation effect on the drain
induced barrier lowering (OIBL) of strained and unstrained, p and n type triple gate SOI …

The stringent requirements imposed by the ITRS rely on the introduction of alternative and/or
new gate concepts and the implementation of advanced processing modules and materials …