Terahertz (THz) light has proven to be a fine tool to probe and control quasi-particles and
collective excitations in solids, to drive phase transitions and associated changes in material …

The burgeoning field of anion engineering in oxide‐based compounds aims to tune physical
properties by incorporating additional anions of different size, electronegativity, and charge …

Since the early 1980s, most electronics have relied on the use of complementary metal–
oxide–semiconductor (CMOS) transistors. However, the principles of CMOS operation …

This review stands in the larger framework of functional materials by focussing on
heterostructures of rare-earth nickelates, described by the chemical formula RNiO 3 where R …

A new benchmarking of beyond-CMOS exploratory devices for logic integrated circuits is
presented. It includes new devices with ferroelectric, straintronic, and orbitronic …

High-mobility perovskite BaSnO 3 films are of significant interest as new wide bandgap
semiconductors for power electronics, transparent conductors, and as high mobility …

Functional oxides are an untapped resource for futuristic devices and functionalities. These
functionalities can range from high temperature superconductivity to multiferroicity and novel …

Oxide heterostructures have been shown to exhibit unusual physics and hold the promise of
novel electronic applications. We present a set of criteria to select and design interfaces …

Resistances that exceed the Mott-Ioffe-Regel limit (known as bad metal behavior) and non-
Fermi liquid behavior are ubiquitous features of the normal state of many strongly correlated …

Ferroelectric interfacial devices consist of materials systems whose interfacial electronic
properties (such as a 2D electron gas or an interfacial magnetic spin configuration) are …