Annealing of selenium‐implanted GaAs
NJ Barrett, JD Grange, BJ Sealy… - Journal of applied …, 1984 - pubs.aip.org
The electrical and structural properties of 1 X 10 14 Se+ cm-2, 100-400 k V and 5 X 1012
Se++ cm-2, 350-kV implants into (100) semi-insulating GaAs have been studied. Peak …
Se++ cm-2, 350-kV implants into (100) semi-insulating GaAs have been studied. Peak …
Rutherford back-scattering and ellipsometry of selenium implanted InP
SS Gill, BJ Sealy, KG Stephens - Journal of Physics D: Applied …, 1981 - iopscience.iop.org
Good correlation has been found between disorder, measured by Rutherford back-
scattering and the extinction coefficient obtained from ellipsometry measurements for 200 …
scattering and the extinction coefficient obtained from ellipsometry measurements for 200 …
Ion Implantation in Iii–V Semiconductors
JP Donnelly - Materials Processing: Theory and Practices, 1989 - Elsevier
Ion beam technology has become an important part of the semiconductor industry, both in
the research laboratory and on the production line. Because of the precise control possible …
the research laboratory and on the production line. Because of the precise control possible …