DC microgrid protection: A comprehensive review
S Beheshtaein, RM Cuzner… - IEEE Journal of …, 2019 - ieeexplore.ieee.org
DC microgrids have attracted significant attention over the last decade in both academia and
industry. DC microgrids have demonstrated superiority over AC microgrids with respect to …
industry. DC microgrids have demonstrated superiority over AC microgrids with respect to …
A review of SiC IGBT: models, fabrications, characteristics, and applications
L Han, L Liang, Y Kang, Y Qiu - IEEE Transactions on Power …, 2020 - ieeexplore.ieee.org
Along with the increasing maturity for the material and process of the wide bandgap
semiconductor silicon carbide (SiC), the insulated gate bipolar transistor (IGBT) representing …
semiconductor silicon carbide (SiC), the insulated gate bipolar transistor (IGBT) representing …
99% efficient 10 kV SiC-based 7 kV/400 V DC transformer for future data centers
The power supply chain of data centers from the medium voltage (MV) utility grid down to the
chip-level voltage consists of many series connected power conversion stages and …
chip-level voltage consists of many series connected power conversion stages and …
10-kV SiC MOSFET power module with reduced common-mode noise and electric field
CM DiMarino, B Mouawad, CM Johnson… - … on Power Electronics, 2019 - ieeexplore.ieee.org
The advancement of silicon carbide (SiC) power devices with voltage ratings exceeding 10
kV is expected to revolutionize medium-and high-voltage systems. However, present power …
kV is expected to revolutionize medium-and high-voltage systems. However, present power …
99.1% efficient 10 kV SiC-based medium-voltage ZVS bidirectional single-phase PFC AC/DC stage
Due to their extremely high energy demand, data centers are directly supplied from a
medium-voltage (MV) grid. However, a significant part of this energy is dissipated in the …
medium-voltage (MV) grid. However, a significant part of this energy is dissipated in the …
7.2-kV Single-Stage Solid-State Transformer Based on the Current-Fed Series Resonant Converter and 15-kV SiC mosfets
This paper proposes a novel two-level single-stage direct ac-ac converter for realizing a 7.2-
kV medium-voltage (MV) solid-state transformer (SST) based on 15-kV SiC mosfets. A new …
kV medium-voltage (MV) solid-state transformer (SST) based on 15-kV SiC mosfets. A new …
Highly compact isolated gate driver with ultrafast overcurrent protection for 10 kV SiC MOSFETs
Silicon Carbide (SiC) semiconductor technology offers the possibility to manufacture power
devices with un-precedented blocking voltages in the range of 10... 15 kV and superior …
devices with un-precedented blocking voltages in the range of 10... 15 kV and superior …
A gate drive with power over fiber-based isolated power supply and comprehensive protection functions for 15-kV SiC MOSFET
This paper presents a 15kV silicon carbide (SiC) MOSFET gate drive, which features high
common-mode (CM) noise immunity, small size, light weight, and robust yet flexible …
common-mode (CM) noise immunity, small size, light weight, and robust yet flexible …
Review on the reliability mechanisms of SiC power MOSFETs: A comparison between planar-gate and trench-gate structures
J Wei, Z Wei, H Fu, J Cao, T Wu, J Sun… - … on Power Electronics, 2023 - ieeexplore.ieee.org
To clarify the current research situation and offer a better understanding of the reliability for
silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors (mosfet s), a …
silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors (mosfet s), a …
Accurate transient calorimetric measurement of soft-switching losses of 10-kV SiC MOSFETs and diodes
The characterization of soft-switching losses (SSL) of modern high-voltage SiC MOSFETS is
a difficult but necessary task in order to provide a sound basis for the accurate modeling of …
a difficult but necessary task in order to provide a sound basis for the accurate modeling of …