Thin gate oxide damage due to plasma processing
Plasma processes cause current to flow through the thin oxide and the resultant plasma-
induced damage can be simulated and modelled as damage produced by constant-current …
induced damage can be simulated and modelled as damage produced by constant-current …
ESD/antenna diodes for through-silicon vias
Q Su, M Ni, ZW Tang, J Kawa, JD Sproch - US Patent 8,264,065, 2012 - Google Patents
BACKGROUND The present invention relates to methods and structures for addressing ESD
and antenna effects experienced by devices in the presence of through-silicon Vias …
and antenna effects experienced by devices in the presence of through-silicon Vias …
Accelerated testing of SiO/sub 2/reliability
E Rosenbaum, JC King, C Hu - IEEE Transactions on Electron …, 1996 - ieeexplore.ieee.org
This paper compares several popular accelerated test methods for projecting SiO/sub
2/lifetime distribution or failure rate: constant-voltage and constant-current time-to …
2/lifetime distribution or failure rate: constant-voltage and constant-current time-to …
A single-chip 60-V bulk charger for series Li-ion batteries with smooth charge-mode transition
SH Yang, JW Liu, CC Wang - IEEE Transactions on Circuits and …, 2012 - ieeexplore.ieee.org
In this paper, a single-chip 60-V battery charger prototype is presented. The newly proposed
charge mode transition can ensure smooth transitions between incremental current (IC) …
charge mode transition can ensure smooth transitions between incremental current (IC) …
Plasma etching charge-up damage to thin oxides
MOS gate oxide degradation has been attributed to electrical charging during plasma
processing| 1~-| 23~. Since plasma-induced damage may cause further IC yield loss by …
processing| 1~-| 23~. Since plasma-induced damage may cause further IC yield loss by …
Modeling oxide thickness dependence of charging damage by plasma processing
Develops a quantitative model for thin oxide plasma charging damage by examining the
oxide thickness dependence of charging current. The current is deduced from capacitance …
oxide thickness dependence of charging current. The current is deduced from capacitance …
Multilevel routing with antenna avoidance
As technology advances into the nanometer territory, the antenna problem has caused
significant impact on routing tools. The antenna effect is a phenomenon of plasma-induced …
significant impact on routing tools. The antenna effect is a phenomenon of plasma-induced …
Dependence of plasma-induced oxide charging current on Al antenna geometry
The dependence of the plasma-induced oxide charging current on Al electrode geometry
has been studied. The stress current is collected only through the electrode surfaces not …
has been studied. The stress current is collected only through the electrode surfaces not …
Detection of an antenna effect in VLSI designs
W Maly, C Ouyang, S Ghosh… - Proceedings. 1996 IEEE …, 1996 - ieeexplore.ieee.org
This paper describes an extraction methodology capable of detecting" antenna" condition in
VLSI designs. Proposed methodology can handle large size designs using standard design …
VLSI designs. Proposed methodology can handle large size designs using standard design …
A new router for reducing" antenna effect" in ASIC design
H Shirota, T Sadakane, M Terai… - Proceedings of the IEEE …, 1998 - ieeexplore.ieee.org
In this paper, an efficient router for reducing" antenna effect" damage is reported. The
antenna effect is a phenomenon of gate-oxide degradation by charge buildup on conductors …
antenna effect is a phenomenon of gate-oxide degradation by charge buildup on conductors …