A big research effort is currently dedicated to the development of thermoelectric devices
capable of a direct thermal-to-electrical energy conversion, aiming at efficiencies as high as …

Miniaturization of electronic devices aims at manufacturing ever smaller products, from
mesoscopic to nanoscopic sizes. This trend is challenging because the increased levels of …

A silicon nanowire (Si-NW) with a gate-all-around (GAA) structure is implemented on a bulk
wafer for a junctionless (JL) field-effect transistor (FET). A suspended Si-NW from the bulk-Si …

This letter demonstrates the first fabricated four-transistor logic gates using polarity-
configurable, gate-all-around silicon nanowire transistors. This technology enhances …

Thermal atomic layer etching (ALE) of silicon was performed using O2, HF, and Al (CH3) 3
as the reactants at temperatures from 225 to 290° C. This thermal etching process is based …

Research in the field of electronics of 1D group-IV semiconductor structures has attracted
increasing attention over the past 15 years. The exceptional combination of the unique 1D …

Abstract According to the International Roadmap for Devices and Systems, gate-all-around
(GAA) metal–oxide–semiconductor field-effect transistors (MOSFETs) will become the main …

In this paper, we have analyzed the design parameters of Cylindrical Surrounding Double-
Gate (CSDG) MOSFETs as an RF switch for the advanced wireless telecommunication …

On approach towards the end of technology roadmap, a revolutionary approach towards the
nanowire transistors is favorable due to the full control of carrier transport. The transistor …

Silicon is one of the most technologically important materials, used extensively in
electronics, solar cells, micro-electro-mechanical systems (MEMS) based devices and more …