Resistive switching (RS) phenomena are reversible changes in the metastable resistance
state induced by external electric fields. After discovery∼ 50 years ago, RS phenomena …

This review article introduces resistive switching processes that are being considered for
nanoelectronic nonvolatile memories. The three main classes are based on an …

In this paper, recent progress of binary metal–oxide resistive switching random access
memory (RRAM) is reviewed. The physical mechanism, material properties, and electrical …

Numerous candidates attempting to replace Si-based flash memory have failed for a variety
of reasons over the years. Oxide-based resistance memory and the related memristor have …

Synaptic devices based on 2D‐layered materials have emerged as high‐efficiency
electronic synapses and neurons for neuromorphic computing. Lateral 2D synaptic devices …

Issues in the circuitry, integration, and material properties of the two‐dimensional (2D) and
three‐dimensional (3D) crossbar array (CBA)‐type resistance switching memories are …

Resistive switching memory (RRAM) devices generally rely on the formation/dissolution of
conductive filaments through insulating materials, such as metal oxides and chalcogenide …

Memristors are one of the emerging technologies that can potentially replace state-of-the-art
integrated electronic devices for advanced computing and digital and analog circuit …

Through a simple industrialized technique which was completely fulfilled at room
temperature, we have developed a kind of promising nonvolatile resistive switching memory …

Correlated electrons in transition metal oxides can form a variety of electronic phases. The
phase change between these various states gives rise to novel device functions, including …