(57) ABSTRACT A method for programming a RelAM cell including a ReRAM device
connected in series with an access transistor includes biasing the ReRAM cell with a …

A reference circuit for generating a reference current includes a plurality of resistive
elements including at least one magnetic tunnel junction (MTJ). A control circuit is coupled to …

A resistive random access memory cell includes three resis tive random access memory
devices, each resistive random access memory device having an ion source layer and a …

Resistive random access memory (RRAM) based multiplexers and field programmable gate
arrays (FPGAs) are provided. The RRAM-based multiplexers and FPGAs include a 4T1R …

A device includes a memory-cell array and a sense-amplifier. A decoder connects a first BL
to the sense amplifier. The decoder includes first and second multiplexers. The first …

A low-leakage resistive random access memory cell includes a complementary pair of bit
lines and a switch node. A first ReRAM device is connected to a first one of the bit lines. A p …

A resistive random-access memory device formed on a semiconductor substrate includes a
first interlayer dielectric formed over the semiconductor substrate and includes a first via. A …

A method for preventing over-programming of resistive random access (ReRAM) based
memory cells in a ReRAM memory array includes applying a programming voltage in a …

A resistive random-access memory (ReRAM) cell includes a field-effect transistor (FET) and
a resistive element. The FET having a gate port, a drain port, and a source port. The gate …

A magnetic junction memory device is provided. The magnetic junction memory device
including a sensing circuit including a sensing node, the sensing node being connected to a …