A common-mode voltage reduction method using an active power filter for a three-phase three-level NPC PWM converter

JH Jung, SI Hwang, JM Kim - IEEE Transactions on Industry …, 2021 - ieeexplore.ieee.org
This article proposes a common-mode (CM) voltage reduction method using an active
power filter (APF) and common-mode transformer (CMT) for a grid-connected three-phase …

Investigation Into Active Gate-Driving Timing Resolution and Complexity Requirements for a 1200 V 400 A Silicon Carbide Half Bridge Module

M Parker, I Sahin, R Mathieson… - IEEE Open Journal of …, 2023 - ieeexplore.ieee.org
Silicon Carbide MOSFETs have lower switching losses when compared to similarly rated
Silicon IGBT, but exhibit faster switching edges, larger overshoots and increased oscillatory …

Conducted noise simulation on AC–DC converter using SiC-MOSFET

W Kitagawa, T Kutsuna, K Kuwana… - IEEE Transactions …, 2021 - ieeexplore.ieee.org
Simulations performed from simpler and more accurate modeling help us to clarify the path
and cause of noise and design filters that reduce common-mode noise. This article …

Reduced Overshoots, Oscillations and dV/dt Generation in Parallel Connected SiC MOSFET Modules with Optional Active Current Balancing

M Parker, S Neira, EL Horsley… - IEEE Transactions on …, 2024 - ieeexplore.ieee.org
Silicon Carbide MOSFETs offer increased switching speeds, reduced filtering component
sizes and lower switching losses when compared to Silicon IGBTs in power converters …

Conducted EMI Reduction by Active Power Filter Embedded in Neutral-Point-Clamped Converters

JH Jung, JM Kim, M Liserre - IEEE Transactions on Power …, 2023 - ieeexplore.ieee.org
This article proposes a novel modulation strategy with an active power filter (APF) for
reducing conducted electromagnetic interference (EMI) in three-level neutral-point-clamped …

A prototypal PCB board for the EMI characterization of SiC-based innovative switching devices

F Pellitteri, M Caruso, S Stivala, A Parisi… - 2020 IEEE 20th …, 2020 - ieeexplore.ieee.org
In this paper, a preliminary PCB board for the electromagnetic interference (EMI)
characterization of innovative silicon-carbide (SiC) based switching devices is presented …

Design, Analysis and Experimental Verification of Arm Link Enhanced Modular Multilevel Converter

R Aguilar, L Tarisciotti, J Pereda - IEEE Journal of Emerging …, 2024 - ieeexplore.ieee.org
The modular multilevel converter (MMC) has gained attention in high-and medium-voltage
dc–ac conversion due to its modularity, scalability, and excellent results in power quality and …

A Simple and Non-Destructive Method to Measure Per-Terminal Baseplate Coupling of Power Modules

BT DeBoi, A Lemmon, A Curbow - IEEE Open Journal of Power …, 2023 - ieeexplore.ieee.org
The fast slew rates of wide bandgap semiconductors can produce common-mode currents
that flow through the baseplates of multi-chip power modules. These currents increase the …

Conducted EMI Analysis and Modeling for the Main Circuit of a MMC Submodule

R Wang, D Jiang, J Chen, W Sun - 2022 Asia-Pacific …, 2022 - ieeexplore.ieee.org
Electromagnetic interference (EMI) has been a nonignorable problem in modular multilevel
converter (MMC) systems. Especially inside the submodules, severe EMI excited by the …

Design and Integration Methodology of CM Stripline Inductors and EMI Filters in SiC Power Modules for Low Conductive CM EMI

Y Zhang, Y Xie, W Xu, Y Yan, C Chen… - 2024 IEEE 10th …, 2024 - ieeexplore.ieee.org
Silicon carbide (SiC) devices have become increasingly popular in power electronics. The
fast-switching performance of WBG devices enables the converter with high power density …