RF Performance Analysis of Conventional and Recessed Gate AlGaN/GaN MOSHEMT using β–Ga2O3 as Dielectric Layer
N Amina, M Zitouni, T Zineeddine - … International Conference on …, 2023 - ieeexplore.ieee.org
In this research paper, a novel heterostructure AlGaN/GaN metal-oxide-semiconductor high
electron mobility transistor (MOSHEMT) is proposed, using an ultra-wide bandgap Oxide …
electron mobility transistor (MOSHEMT) is proposed, using an ultra-wide bandgap Oxide …