A method may include providing a surface feature on a substrate, the surface feature
comprising a feature shape a feature location, and a dimension along a first direction within …

A method of patterning a substrate. The method may include providing a surface feature on
the substrate, the surface feature having a first dimension along a first direction within a …

A method may include generating a plasma in a plasma chamber and directing the ions
comprising at least one of a condensing species and inert gas species from the plasma to a …

A multilayer structure including a hexagonal epitaxial layer, such as GaN or other group III-
nitride (III-N) semiconductors, a< 111> oriented textured layer, and a non-single crystal …

A method of patterning a substrate may include providing a cavity in a layer, disposed on the
substrate. The cavity may have a first length along a first direction and a first width along a …

A method of forming a device may include forming a component in a first level of a device
structure; forming a contact cavity overlapping the component, the contact cavity forming a …

H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface
barrier specially adapted for light emission; Processes or apparatus specially adapted for …

H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface
barrier specially adapted for light emission; Processes or apparatus specially adapted for …

Primary Examiner—Binh X Tran ABSTRACT A method of patterning a substrate. The method
may include: providing a first surface feature and a second surface feature in a staggered …

A method includes providing a structure having a substrate and a fin protruding from the
substrate; forming a dummy gate stack over the fin; forming a gate spacer on sidewalls of the …