The aim of this work is to present the main optoelectronic characteristics of large-area one-
dimensional position-sensitive detectors (1D TFPSDs) based on amorphous silicon (a-Si) …

The aim of this work is to provide the basis for the interpretation, under steady state
conditions, of the lateral photoeffect in p‐i‐na‐Si: H one‐dimensional thin‐film position …

The application of hydrogenated amorphous silicon (a-Si: H) to optoelectronic devices are
now well established as a viable low cost technology and is presently receiving much …

Amorphous and microcrystalline glass/ZnO: Al/p (a-Si: H)/i (a-Si: H)/n (a-Si1 C: H)/Al imagers
with different n-layer resistivities were produced by plasma-enhanced chemical vapor …

Large area thin film position sensitive detectors based on amorphous silicon technology
have been prepared on polyimide substrates using the conventional plasma-enhanced …

The aim of this work is to provide the basis for the interpretation, under steady state and in
the low‐voltage regime of the dark current‐density–voltage (J–V) characteristics of …

Previous works on lateral photovoltaic effect (LPE) were mostly limited to one dimension, but
this paper explored two-dimensional characteristics of metal-oxide-semiconductor (MOS) …

Flexible large area thin film position sensitive detectors based on amorphous silicon
technology were prepared on polyimide substrates using the conventional plasma …

An amorphous ZnO/pin/Al imager that uses a small-signal scanning beam to read out the
short circuit current signal is presented. An analysis of the image geometric distortion …

The aim of this work is to present an analytical model able to interpret the role of the thin
collecting resistive layer on the static performances exhibited by 1D amorphous silicon …