Field-and temperature-dependent magnetotransport measurements on Bi layers grown by
molecular-beam epitaxy have been analyzed by mixed-conduction techniques. In the thin …

Several approaches for surface-sensitive conductance measurements are reviewed.
Particular emphasis is placed on nanoscale multi-point probe techniques. The results for two …

We report the first direct dry transfer of a single-crystalline thin film grown by molecular beam
epitaxy. A double cantilever beam fracture technique was used to transfer epitaxial bismuth …

We report an investigation of the low-temperature electrical transport properties of bismuth
films under applied hydrostatic pressure. Films with their trigonal axis perpendicular to the …

Oscillatory thickness dependences of the electrical conductivity, Hall coefficient, charge
carrier mobility, and Seebeck coefficient were obtained at room temperature for n-type thin …

Ce 3 Bi 4 Au 3 crystallizes in the same noncentrosymmetric cubic structure as the
prototypical Kondo insulator Ce 3 Bi 4 Pt 3. Here we report the physical properties of Ce 3 Bi …

The temperature dependences of the Hall coefficient of thin bismuth films with thicknesses
d= 8 to 215 nm prepared by thermal evaporation in vacuum on mica substrates were …

The room temperature conductance of Bi (111) was measured using microscopic four point
probes with a contact spacing down to 500 nm. The conductance is remarkably similar to …

Magnetic-field dependence of conductivity in ultrathin Bi films is measured in applied
magnetic fields up to 9 T, in both directions, perpendicular and parallel to the film plane, at …

In ultrathin films of nanometer-order thickness, which correspond to the Fermi wavelength,
novel quantum phenomena are observed because the electronic systems are restricted …