Comparing smoothing techniques for extracting MOSFET threshold voltage
C Stankus, M Ahmed - Solid-State Electronics, 2020 - Elsevier
Measurement noise acts as a barrier to the accurate calculation of threshold voltage by
derivative-based extraction methods. We examined several smoothing techniques and their …
derivative-based extraction methods. We examined several smoothing techniques and their …
Neutron Radiation Failure-in-time Test of 1200V and 1700V SiC Power Transistors
M Ahmed, C Stankus, A Yanguas-Gil… - 2020 IEEE Radiation …, 2020 - ieeexplore.ieee.org
This research is focused on the accelerated in-situ neutron radiation failure-in-time test (at a
sea-level height) that was performed on 1200V and 1700V SiC power n-MOSFETs from 3 …
sea-level height) that was performed on 1200V and 1700V SiC power n-MOSFETs from 3 …
Coupled radiation and aging effects on wide bandgap power devices
K Niskanen - 2020 - theses.hal.science
Power electronic components operating in radiation environments are exposed to different
types of radiation effects such as single event, ionizing dose and displacement damage …
types of radiation effects such as single event, ionizing dose and displacement damage …