Although the highest superconducting critical temperature, T c, found in an elemental solid
at ambient pressure is 9.2 K (niobium), under the application of ultra-high pressures, several …

Thin films based on silicon and transition-metal elements dominate the semi-conducting
industry and are ubiquitous in all modern devices. Films have also been produced in the …

The topology of the Fermi surface controls the electronic response of a metal, including
charge density wave (CDW) formation. A topology conducive for Fermi surface nesting …

We report an experimental determination of the dispersion of the soft phonon mode along
[100] in uranium as a function of pressure. The energies of these phonons increase rapidly …

The dissociation of H 2 O on γ-U (110) and γ-U (100) surfaces has been studied by using ab
initio molecular dynamics simulations at an elevated temperature of 800 K. The simulation …

LaPt 2 Si 2 in a single-crystalline form was subjected to structure, thermodynamic, thermal,
and electron transport studies with a special emphasis on the structure phase transition …

Fundamental electronic properties of γ-Uranium were determined using Mo doping
combined with ultrafast (splat) cooling, which allowed stabilization of the bcc structure to low …

The γ-U phase alloys can be retained down to low temperatures with less required alloying
concentration by using the splat-cooling technique with a cooling rate better than 10 6 K/s …

Thin layers of orthorhombic uranium (α-U) have been grown onto buffered sapphire
substrates by dc magnetron sputtering, resulting in the discovery of new epitaxial matches to …

Based on first-principles molecular dynamics simulations at finite temperatures, we
systematically study the adsorption and dissociation of water molecules on the γ-U (1 0 0) …