Review of Si-based GeSn CVD growth and optoelectronic applications
Y Miao, G Wang, Z Kong, B Xu, X Zhao, X Luo, H Lin… - Nanomaterials, 2021 - mdpi.com
GeSn alloys have already attracted extensive attention due to their excellent properties and
wide-ranging electronic and optoelectronic applications. Both theoretical and experimental …
wide-ranging electronic and optoelectronic applications. Both theoretical and experimental …
Si-based GeSn lasers with wavelength coverage of 2–3 μm and operating temperatures up to 180 K
A Si-based monolithic laser is strongly desired for the full integration of Si-photonics. Lasing
from the direct bandgap group-IV GeSn alloy has opened a new avenue, different from the …
from the direct bandgap group-IV GeSn alloy has opened a new avenue, different from the …
Double peak emission in lead halide perovskites by self-absorption
Despite the rapidly increasing efficiencies of perovskite solar cells, the optoelectronic
properties of this material class are not completely understood. Especially when measured …
properties of this material class are not completely understood. Especially when measured …
The electronic band structure of Ge1− xSnx in the full composition range: indirect, direct, and inverted gaps regimes, band offsets, and the Burstein–Moss effect
MP Polak, P Scharoch… - Journal of Physics D …, 2017 - iopscience.iop.org
A comprehensive and detailed study of the composition dependence of lattice constants,
band gaps and band offsets has been performed for bulk Ge 1− x Sn x alloy in the full …
band gaps and band offsets has been performed for bulk Ge 1− x Sn x alloy in the full …
Sn-based waveguide pin photodetector with strained GeSn/Ge multiple-quantum-well active layer
YH Huang, GE Chang, H Li, HH Cheng - Optics Letters, 2017 - opg.optica.org
We report on Sn-based pin waveguide photodetectors (WGPD) with a pseudomorphic
GeSn/Ge multiple-quantum-well (MQW) active layer on a Ge-buffered Si substrate. A …
GeSn/Ge multiple-quantum-well (MQW) active layer on a Ge-buffered Si substrate. A …
Progress on germanium–tin nanoscale alloys
Group IV alloys have attracted interest in the drive to create Si compatible, direct band gap
materials for implementation in complementary metal oxide semiconductor (CMOS) and …
materials for implementation in complementary metal oxide semiconductor (CMOS) and …
Study of low-defect and strain-relaxed GeSn growth via reduced pressure CVD in H2 and N2 carrier gas
High quality, thick (up to 1.1 μm), strain relaxed GeSn alloys were grown on Ge-buffered Si
(1 0 0) in an ASM Epsilon® chemical vapor deposition system using SnCl 4 and low-cost …
(1 0 0) in an ASM Epsilon® chemical vapor deposition system using SnCl 4 and low-cost …
Controlling barrier height and spectral responsivity of p–i–n based GeSn photodetectors via arsenic incorporation
GeSn compounds have made many interesting contributions in photodetectors (PDs) over
the last ten years, as they have a detection limit in the NIR and mid-IR region. Sn …
the last ten years, as they have a detection limit in the NIR and mid-IR region. Sn …
Fundamentals of Ge1− xSnx and SiyGe1− x-ySnx RPCVD epitaxy
We have studied epitaxial growth of Ge 1− x Sn x and Si y Ge 1− xy Sn x materials in 200
mm and 300 mm industrial CVD reactors using industry standard precursors. The growth …
mm and 300 mm industrial CVD reactors using industry standard precursors. The growth …
Deposition of GeSn film on Si substrate by plasma-enhanced chemical vapor deposition using GeCl4 and SnCl4 in H2 for developing short-wave infrared Si photonics
TH Yang, ZZ Lin, SC Tsai, JZ Dai, SM Chen… - Materials Science in …, 2023 - Elsevier
The deposition of a GeSn film on Si substrate with GeCl 4 and SnCl 4 in H 2 as precursors
was demonstrated by using plasma-enhanced chemical vapor deposition (PECVD). A …
was demonstrated by using plasma-enhanced chemical vapor deposition (PECVD). A …