Group-III-nitride semiconductors, including AlN, GaN, InN and their ternary, quaternary
compounds, are promising electronic and optoelectronic materials for the applications in …

The progress of the Internet‐of‐Things in the past few years has necessitated the support of
high‐performance sensors. Schottky‐contacted nanowire sensors have attracted …

In the last two decades, GaN nanostructures of various forms like nanowires (NWs),
nanotubes (NTs), nanofibers (NFs), nanoparticles (NPs) and nanonetworks (NNs) have …

Group III nitrides are attracting considerable attention as promising materials for a variety of
applications due to their wide bandgap, high electron mobility, high thermal stability, and …

The fabrication and characterization of a metal–semiconductor–metal ultraviolet
photodetector are studied. The photodetector is based on TiO 2 nanorods (NRs) grown on p …

In this work, we have demonstrated a FET-like ammonia (NH 3) gas sensor fabricated on a
unique structure namely GaN honeycomb nanonetwork (GaN-HN) which is in-plane …

Ordered nanoporous structures are promising for multifunctional devices and systems. Here,
we demonstrate the controllable layer-ordered porous GaN structures using selective …

Material architecture design plays a crucial role in developing gas sensors. GaN has been
proposed as a promising material for H 2 gas sensor. However, it is subject to long response …

One of the biggest issues with GaN-based hydrogen sensors is their sensitivity to humidity in
the ambient. We demonstrate that encapsulation of Pt-AlGaN/GaN Schottky diode with poly …

H 2 gas sensors for different applications require various detection ranges, such as 1–100
ppm for exhale breath test and 0–40000 ppm for H 2 energy vehicles. Coarse-tuning of the …