The emergence of gallium nitride high-electron-mobility transistor (GaN HEMT) devices has
the potential to deliver high power and high frequency with performances surpassing …

Conventional silicon (Si)-based power devices face physical limitations—such as switching
speed and energy efficiency—which can make it difficult to meet the increasing demand for …

Gallium nitride (GaN)/porous silicon (PSi) film was prepared using a pulsed laser deposition
method and 1064 nm Nd: YAG laser for optoelectronic applications and a series of Psi …

In this study, the fabrication of nanostructured GaN/porous Si by pulsed laser deposition
(PLD) was demonstrated. The porous silicon was prepared using laser-assisted …

With the development of energy efficiency technologies such as 5G communication and
electric vehicles, Si-based GaN microelectronics has entered a stage of rapid …

We report on the high-voltage, noise, and radio frequency (RF) performances of aluminium
gallium nitride/gallium nitride (AlGaN/GaN) on silicon carbide (SiC) devices without any GaN …

AlGaN/GaN hetero-structure based High electron mobility transistor (HEMT) is one of the
emerged electronic devices for high power and high frequency applications. In this report …

Gallium nitride (GaN) devices have been successfully commercialized due to their superior
performance, especially their high-power transformation efficiency. To further reduce the …

The impact of growth temperature (GT), in the range from 875° to 825° C, on the
morphological, structural, electrical, and optical properties of InGaN/GaN multiple quantum …

Gallium nitride (GaN)-based high-electron mobility transistors (HEMTs) are widely used in
high power and high frequency application fields, due to the outstanding physical and …