Thermal management on IGBT power electronic devices and modules

C Qian, AM Gheitaghy, J Fan, H Tang, B Sun… - Ieee …, 2018 - ieeexplore.ieee.org
As an increasing attention towards sustainable development of energy and environment, the
power electronics (PEs) are gaining more and more attraction on various energy systems …

Fast novel thermal analysis simulation tool for integrated circuits (FANTASTIC)

L Codecasa, V d'Alessandro, A Magnani… - … Investigations of ICs …, 2014 - ieeexplore.ieee.org
This work describes a Fast novel thermal analysis simulation tool for integrated circuits
(FANTASTIC), which is fully automated and relies on an enhanced version of the Multi-Point …

Circuit-based electrothermal simulation of power devices by an ultrafast nonlinear MOR approach

L Codecasa, V d'Alessandro… - IEEE Transactions on …, 2015 - ieeexplore.ieee.org
This paper presents an efficient circuit-based approach for the nonlinear dynamic
electrothermal simulation of power devices and systems subject to radical self-heating. The …

On-line junction temperature monitoring of switching devices with dynamic compact thermal models extracted with model order reduction

F Di Napoli, A Magnani, M Coppola, P Guerriero… - Energies, 2017 - mdpi.com
Residual lifetime estimation has gained a key point among the techniques that improve the
reliability and the efficiency of power converters. The main cause of failures are the junction …

Circuit-based electrothermal simulation of multicellular SiC power MOSFETs using FANTASTIC

V d'Alessandro, L Codecasa, AP Catalano… - Energies, 2020 - mdpi.com
This paper discusses the benefits of an advanced highly-efficient approach to static and
dynamic electrothermal simulations of multicellular silicon carbide (SiC) power MOSFETs …

Ruggedness of Silicon Power MOSFETs—Part II: Device Design Failures and Modeling: A Review

R Tambone, A Ferrara, R Siemieniec… - … on Electron Devices, 2024 - ieeexplore.ieee.org
Power MOSFETs are crucial devices in a multitude of everyday applications that require an
extended lifetime. Inadequate design of these devices may cause premature failures. In this …

SPICE modeling and dynamic electrothermal simulation of SiC power MOSFETs

V d'Alessandro, A Magnani, M Riccio… - 2014 IEEE 26th …, 2014 - ieeexplore.ieee.org
This paper presents a computationally efficient 3-D simulation approach for the dynamic
electrothermal analysis of SiC power MOSFETs. The strategy relies on a circuit …

[PDF][PDF] 全浸式蒸发冷却IGBT 电热耦合模型研究

张玉斌, 温英科, 阮琳 - TRANSACTIONS OF CHINA …, 2022 - dgjsxb.ces-transaction.com
摘要电力电子器件的小型高集成度发展趋势对散热技术提出挑战. 相较于间接液冷,
采用全浸式蒸发冷却技术的绝缘栅双极型晶体管(IGBT), 具有器件温升低, 温度分布均匀的优点 …

Thermal feedback blocks for fast and reliable electrothermal circuit simulation of power circuits at module level

A Magnani, F Di Napoli, M Riccio… - … Devices and ICs …, 2016 - ieeexplore.ieee.org
Thermal Feedback Blocks are a viable approach to perform thermal and electrothermal
simulations of electronics systems with very fast-switching inputs, for which the coupling of a …

Effect of the collector design on the IGBT avalanche ruggedness: A comparative analysis between punch-through and field-stop devices

P Spirito, L Maresca, M Riccio, G Breglio… - … on Electron Devices, 2015 - ieeexplore.ieee.org
In this paper, we investigate the effect of collector design on the onset and the extension of
the negative differential resistance (NDR) region that develops in the blocking curves of field …