A novel energy storage system for efficiency improvement of fuel cell electric vehicles based on a new high step-up DC-DC converter
P Bayat, P Bayat - AEU-International Journal of Electronics and …, 2024 - Elsevier
Proton exchange membrane fuel cell systems have relatively low efficiency in low power
applications and have many uncertainties. In this regard, the design of a high-efficiency …
applications and have many uncertainties. In this regard, the design of a high-efficiency …
The impact of a recessed Δ-shaped gate in a vertical CAVET AlGaN/GaN MIS-HEMT for high-power low-loss switching applications
A Danielraj, S Deb, A Mohanbabu… - Journal of Computational …, 2022 - Springer
A Δ-shaped gate GaN-based E-mode vertical current-aperture vertical electron transistor
(CAVET) device with a boron-doped current block layer (B-CBL) on an n+ GaN substrate is …
(CAVET) device with a boron-doped current block layer (B-CBL) on an n+ GaN substrate is …
Study of AlGaN/GaN vertical superjunction HEMT for improvement of breakdown voltage and specific on-resistance
M Zhang, Z Guo, Y Huang, Y Li, J Ma, X Xia… - IEEE …, 2021 - ieeexplore.ieee.org
A GaN-based vertical superjunction high electron mobility transistor (SJ HEMT) with a
composite structure (CS-SJ HEMT) is proposed and analyzed by Silvaco TCAD to improve …
composite structure (CS-SJ HEMT) is proposed and analyzed by Silvaco TCAD to improve …
A comparative analysis of GaN and InGaN/GaN coupling channel HEMTs on silicon carbide substrate for high linear RF applications
P Murugapandiyan, SRK Kalva, V Rajyalakshmi… - Micro and …, 2023 - Elsevier
In this work, we report comparative analysis of stable transconductance and high gain
linearity for AlGaN and InAlN barrier-based HEMTs using an InGaN/GaN coupling channel …
linearity for AlGaN and InAlN barrier-based HEMTs using an InGaN/GaN coupling channel …
Millimeter-Wave single-pole-double-throw switch design with Stacked-FET topology using network cascading analysis
In this paper, the correlation between the key performance of the shunt-type single-pole-
double-throw (SPDT) switch circuitry and the intrinsic device parameters is theoretically …
double-throw (SPDT) switch circuitry and the intrinsic device parameters is theoretically …
E‐Mode‐Operated Advanced III‐V Heterostructure Quantum Well Devices for Analog/RF and High‐Power Switching Applications
A Mohanbabu, N Vinodhkumar… - … for Integrated Circuit …, 2023 - Wiley Online Library
The most significant invention of the 20 th century was the transistor. After invented the first
transistor, the technology advancement based on transistor arrived very quickly in the …
transistor, the technology advancement based on transistor arrived very quickly in the …
Center potential based analysis of Si and III-V gate all around field effect transistors (GAA-FETs)
YK Verma, SK Gupta - Silicon, 2021 - Springer
In this brief, the center potential based analysis of Si and AlGaN/GaN gate all around field
effect transistors (GAA-FET) is presented. The center potential is calculated for different …
effect transistors (GAA-FET) is presented. The center potential is calculated for different …
A study on the optimized ohmic contact process of AlGaN/GaN-Si MIS-HEMTs
H Guan, G Shen, B Gao, H Zhang, Y Wang… - IEEE Access, 2021 - ieeexplore.ieee.org
AlGaN/GaN-Si based MIS-HEMTs are considered as the popular candidates for application
in the 5G communication system due to their competitive characteristics and low cost. Ohmic …
in the 5G communication system due to their competitive characteristics and low cost. Ohmic …
Comparative analysis of different figures of merit for AlGaN/GaN and Si surrounding-gate field effect transistors (SG-FETs)
The combination of better transport properties of III-V group semiconductors along with
excellent electrostatic control of surrounding gate is a promising option for the future low …
excellent electrostatic control of surrounding gate is a promising option for the future low …
Numerical analysis on the performance enhancement in AlGaN/GaN vertical CAVET with InGaN/AlN/InGaN hybrid current blocking layer
H Yi, Y Wu, S Gao, Q Wang, Z Hongsheng… - Semiconductor …, 2024 - iopscience.iop.org
In this paper, we propose an enhanced superjunction AlGaN/GaN vertical current aperture
vertical electron transistor (CAVET) that integrates a novel hybrid InGaN/AlN/InGaN current …
vertical electron transistor (CAVET) that integrates a novel hybrid InGaN/AlN/InGaN current …