Gate driver circuit based on depletion-mode indium-gallium-zinc oxide thin-film transistors using capacitive coupling effect
J Lee, YH Hong, EK Jung, S Hong… - … on Electron Devices, 2022 - ieeexplore.ieee.org
This article proposes a highly reliable gate driver circuit based on amorphous indium–
gallium–zinc oxide (a-IGZO) thin-film transistors (TFTs). The proposed circuit adopted an …
gallium–zinc oxide (a-IGZO) thin-film transistors (TFTs). The proposed circuit adopted an …
TFT 基板低功耗显示驱动方法研究.
苗宗成， 张瑞寅， 贺泽民… - Chinese Journal of Liquid …, 2023 - search.ebscohost.com
TFT 的低功耗特性能够减少电子设备的能量消耗, 从而达到节省能源, 延长电池寿命,
降低使用设备温度, 提高显示质量的目的. 因此, 低功耗TFT 在电子设备的设计和制造中具有十分 …
降低使用设备温度, 提高显示质量的目的. 因此, 低功耗TFT 在电子设备的设计和制造中具有十分 …
High‐reliability gate driver circuit to prevent ripple voltage
J Lee, J Oh, EK Jung, KC Park, JH Jeon… - Journal of the …, 2021 - Wiley Online Library
In this paper, a high‐reliability gate driver circuit is proposed to prevent multiple outputs. The
proposed circuit ensures reliability of the pull‐up thin‐film transistor (TFT) by periodically …
proposed circuit ensures reliability of the pull‐up thin‐film transistor (TFT) by periodically …