Impact of Channel Thickness on the Performance of JL-DG MOSFET based NAND, NOR, and NOT Logic Gates
S Katharashala, S Gandla, V Bommineni… - 2022 IEEE …, 2022 - ieeexplore.ieee.org
The ever-increasing demand for portable electronic devices has led to the downscaling of
metal oxide semiconductor (MOS) field effect transistors (FETs). However, the downscaling …
metal oxide semiconductor (MOS) field effect transistors (FETs). However, the downscaling …
A nonlinear feed‐forward memory‐less model to fast prediction of threshold voltage in junction‐less double‐gate MOSFETs
M Annabestani, M Nasserian… - … Journal of Numerical …, 2021 - Wiley Online Library
Abstract Decreasing Drain‐Induced‐Barrier‐Lowering (DIBL) is one of the nondesirable
short‐channel effects, causes the threshold voltage of the transistor to be reduced by …
short‐channel effects, causes the threshold voltage of the transistor to be reduced by …
An Algebraic Approach to Fast Estimation of the Threshold Voltage of Junctionless Double Gate MOSFETs Using the Gram Schmidt Method
M Annabestani, M Nasserian, F Hasanzadeh… - arXiv preprint arXiv …, 2019 - arxiv.org
The effect of decreasing Drain-Induced Barrier Lowering (DIBL) is one of the non-desirable
short-channel effects in the MOSFETs family, which causes the threshold voltage of the …
short-channel effects in the MOSFETs family, which causes the threshold voltage of the …