Thermodynamics and phase stability in the Si–O system

SM Schnurre, J Gröbner, R Schmid-Fetzer - Journal of Non-Crystalline …, 2004 - Elsevier
A comprehensive thermodynamic assessment has been carried out on the phases SiO2 (L),
including SiO2 (glass), the amorphous monoxide SiO (am) and on the solubility of oxygen in …

Concentration Phase Separation of Substitution‐Doped Atoms in TMDCs Monolayer

S Wang, D Ding, P Li, Y Sui, G Liu, S Zhao, R Xiao… - Small, 2023 - Wiley Online Library
The density and spatial distribution of substituted dopants affect the transition metal
dichalcogenides (TMDCs) materials properties. Previous studies have demonstrated that the …

A critical review of the process and challenges of silicon crystal growth for photovoltaic applications

S Sekar, K Thamotharan, S Manickam… - Crystal Research …, 2024 - Wiley Online Library
Crystalline silicon (c‐Si) solar cells have been accepted as the only environmentally and
economically acceptable alternative source to fossil fuels. The majority of commercially …

Investigating wafer quality in industrial czochralski‐grown gallium‐doped p‐type silicon ingots with melt recharging

R Basnet, C Sun, T Le, Z Yang, A Liu, Q Jin… - Solar …, 2023 - Wiley Online Library
Herein, a systematic study of the electronic quality of gallium‐doped p‐type silicon wafers
from Czochralski‐grown ingots with melt recharging is presented. It is found that in the as …

Growth of semiconductor silicon crystals

K Kakimoto, B Gao, X Liu, S Nakano - Progress in Crystal Growth and …, 2016 - Elsevier
This paper focuses on the recent developments in Czochralski (CZ) crystal growth of silicon
for large-scale integrated circuits (LSIs) and multi-crystalline silicon growth using a …

Czochralski growth of silicon crystals

J Friedrich, W von Ammon, G Müller - Handbook of Crystal Growth, 2015 - Elsevier
The Czochralski technique is the most important crystal growth method for the industrial
production of silicon with the highest perfection and fabrication rate of all crystal materials …

Thermodynamical analysis of oxygen incorporation from a quartz crucible during solidification of multicrystalline silicon for solar cell

H Matsuo, RB Ganesh, S Nakano, L Liu… - Journal of Crystal …, 2008 - Elsevier
We proposed an oxygen transport model in which the reaction between a liner made of
Si3N4 and a crucible made of SiO2 was taken into account to study the mechanism of …

[图书][B] Silicon, germanium, and their alloys: growth, defects, impurities, and nanocrystals

G Kissinger, S Pizzini - 2014 - books.google.com
Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these
materials still demand research, eminently in view of the improvement of knowledge on …

Methods to improve bulk lifetime in n-type Czochralski-grown upgraded metallurgical-grade silicon wafers

R Basnet, FE Rougieux, C Sun… - IEEE Journal of …, 2018 - ieeexplore.ieee.org
This paper investigates the potential of three different methods-tabula rasa (TR), phosphorus
diffusion gettering (PDG), and hydrogenation, for improving the carrier lifetime in n-type …

Effects of argon flow on impurities transport in a directional solidification furnace for silicon solar cells

Z Li, L Liu, W Ma, K Kakimoto - Journal of Crystal Growth, 2011 - Elsevier
A global simulation including coupled oxygen and carbon transport was carried out to study
the argon flow effects on the impurities transport in a directional solidification furnace for …