Thermodynamics and phase stability in the Si–O system
SM Schnurre, J Gröbner, R Schmid-Fetzer - Journal of Non-Crystalline …, 2004 - Elsevier
A comprehensive thermodynamic assessment has been carried out on the phases SiO2 (L),
including SiO2 (glass), the amorphous monoxide SiO (am) and on the solubility of oxygen in …
including SiO2 (glass), the amorphous monoxide SiO (am) and on the solubility of oxygen in …
Concentration Phase Separation of Substitution‐Doped Atoms in TMDCs Monolayer
The density and spatial distribution of substituted dopants affect the transition metal
dichalcogenides (TMDCs) materials properties. Previous studies have demonstrated that the …
dichalcogenides (TMDCs) materials properties. Previous studies have demonstrated that the …
A critical review of the process and challenges of silicon crystal growth for photovoltaic applications
Crystalline silicon (c‐Si) solar cells have been accepted as the only environmentally and
economically acceptable alternative source to fossil fuels. The majority of commercially …
economically acceptable alternative source to fossil fuels. The majority of commercially …
Investigating wafer quality in industrial czochralski‐grown gallium‐doped p‐type silicon ingots with melt recharging
Herein, a systematic study of the electronic quality of gallium‐doped p‐type silicon wafers
from Czochralski‐grown ingots with melt recharging is presented. It is found that in the as …
from Czochralski‐grown ingots with melt recharging is presented. It is found that in the as …
Growth of semiconductor silicon crystals
K Kakimoto, B Gao, X Liu, S Nakano - Progress in Crystal Growth and …, 2016 - Elsevier
This paper focuses on the recent developments in Czochralski (CZ) crystal growth of silicon
for large-scale integrated circuits (LSIs) and multi-crystalline silicon growth using a …
for large-scale integrated circuits (LSIs) and multi-crystalline silicon growth using a …
Czochralski growth of silicon crystals
J Friedrich, W von Ammon, G Müller - Handbook of Crystal Growth, 2015 - Elsevier
The Czochralski technique is the most important crystal growth method for the industrial
production of silicon with the highest perfection and fabrication rate of all crystal materials …
production of silicon with the highest perfection and fabrication rate of all crystal materials …
Thermodynamical analysis of oxygen incorporation from a quartz crucible during solidification of multicrystalline silicon for solar cell
H Matsuo, RB Ganesh, S Nakano, L Liu… - Journal of Crystal …, 2008 - Elsevier
We proposed an oxygen transport model in which the reaction between a liner made of
Si3N4 and a crucible made of SiO2 was taken into account to study the mechanism of …
Si3N4 and a crucible made of SiO2 was taken into account to study the mechanism of …
[图书][B] Silicon, germanium, and their alloys: growth, defects, impurities, and nanocrystals
G Kissinger, S Pizzini - 2014 - books.google.com
Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these
materials still demand research, eminently in view of the improvement of knowledge on …
materials still demand research, eminently in view of the improvement of knowledge on …
Methods to improve bulk lifetime in n-type Czochralski-grown upgraded metallurgical-grade silicon wafers
This paper investigates the potential of three different methods-tabula rasa (TR), phosphorus
diffusion gettering (PDG), and hydrogenation, for improving the carrier lifetime in n-type …
diffusion gettering (PDG), and hydrogenation, for improving the carrier lifetime in n-type …
Effects of argon flow on impurities transport in a directional solidification furnace for silicon solar cells
A global simulation including coupled oxygen and carbon transport was carried out to study
the argon flow effects on the impurities transport in a directional solidification furnace for …
the argon flow effects on the impurities transport in a directional solidification furnace for …