III-Nitrides receive much research attention and obtain significant development due to their
wide applications in light emitting diodes, laser diodes, ultraviolet detectors, solar cells, field …

Group III nitride semiconductors have attracted great attention in recent years owing to the
successful commercialization of light emitting diodes from ultraviolet to visible range1–5 and …

This completely revised and expanded new edition covers the full range of techniques now
available for the investigation of materials structure and accurate quantitative determination …

Nearly dislocation-free semipolar AlGaN templates are achieved on c-plane sapphire
substrate through controlled nanowire coalescence by selective-area epitaxy. The …

This paper reviews progress in the heteroepitaxial growth of III-nitrides by plasma-assisted
MBE. The role of nucleation layers in determining the polarity of these films is addressed …

GaN tunnel junctions (TJs) are grown by ammonia molecular beam epitaxy. High doping
levels are achieved with a net acceptor concentration close to∼ 10 20 cm− 3, thanks to the …

A number of distributed Bragg reflectors (DBRs) based on AlN/GaN quarterwave layers have
been grown on (0001) sapphire by electron cyclotron resonance plasma-assisted molecular …

Microscale visible light emitting diodes (LEDs), as well as LEDs and laser diodes operating
in the mid and deep ultraviolet (UV), have emerged as the frontier of semiconductor …

The microstructure of oxidized Ni/Au films on p-GaN was examined to elucidate the
formation of a low resistance ohmic contact to p-GaN with a field-emission gun transmission …

Intersubband transition (ISBT) in GaN quantum wells (QWs) was investigated from the
viewpoint of application to ultrafast all-optical switches. The effect of crystalline quality on the …