Influence of 20 MeV electron irradiation on the optical properties and phase composition of SiOx thin films
Homogeneous films from SiO 1.3 (250 nm thick) were deposited on crystalline Si substrates
by thermal evaporation of silicon monoxide. A part of the films was further annealed at 700 C …
by thermal evaporation of silicon monoxide. A part of the films was further annealed at 700 C …
Microstructural characterization of thin SiOx films obtained by physical vapor deposition
X-ray diffraction and reflectivity, X-ray photoelectron spectroscopy and spectroscopic
ellipsometry were applied to study the initial composition, thickness, lattice structure and …
ellipsometry were applied to study the initial composition, thickness, lattice structure and …
UV sensitivity of MOS structures with silicon nanoclusters
Selective UV sensitivity was observed in Metal-Oxide-Semiconductor structures with Si
nanoclusters. Si nanocrystals and amorphous Si nanoparticles (a-Si NPs) were obtained by …
nanoclusters. Si nanocrystals and amorphous Si nanoparticles (a-Si NPs) were obtained by …
Current transport mechanisms of InGaN metal-insulator-semiconductor photodetectors
ZG Shao, DJ Chen, B Liu, H Lu, ZL Xie… - Journal of Vacuum …, 2011 - pubs.aip.org
The authors report on InGaN metal-insulator-semiconductor (MIS) photodetectors with two
different insulating layers of Si 3 N 4 and Al 2 O 3 deposited via plasma-enhanced chemical …
different insulating layers of Si 3 N 4 and Al 2 O 3 deposited via plasma-enhanced chemical …
Metal-Oxide-Semiconductor Structures Containing Silicon Nanocrystals for Application in Radiation Dosimeters
MOS structures containing silicon nanocrystals in the gate dielectric have been tested as
dosimeters for ionizing radiation. Before irradiation the nanocrystals have been charged with …
dosimeters for ionizing radiation. Before irradiation the nanocrystals have been charged with …
Selective photosensitivity of metal–oxide–semiconductor structures with SiOx layer annealed at high temperature
SiO x layers with x= 1.15 and 1.3 and thicknesses of 50 and 100 nm were deposited on
crystalline silicon wafers by thermal evaporation in vacuum. Part of the samples were …
crystalline silicon wafers by thermal evaporation in vacuum. Part of the samples were …
Application of Metal-Oxide-Semiconductor structures containing silicon nanocrystals in radiation dosimetry
This article makes a brief review of the most important results obtained by the authors and
their collaborators during the last four years in the field of the development of metal-insulator …
their collaborators during the last four years in the field of the development of metal-insulator …
Silicon oxide films containing amorphous or crystalline silicon nanodots for device applications
Тhe impressive recent growth of the portable systems market (mobile PC, MP3 audio player,
digital camera, mobile phones, hybrid hard disks, etc.), has increased the interest of the …
digital camera, mobile phones, hybrid hard disks, etc.), has increased the interest of the …
Characterization of Si–SiOx nanocomposite layers by comparative analysis of computer simulated and experimental infra-red transmission spectra
The infra-red (IR) transmission spectra of SiOx (x≤ 2) layers containing crystalline or
amorphous Si nanoparticles deposited on p-Si substrates is simulated in the range 300 …
amorphous Si nanoparticles deposited on p-Si substrates is simulated in the range 300 …
Photoluminescence from SiOx layers containing amorphous silicon nanoparticles
D Nesheva - physica status solidi (a), 2012 - Wiley Online Library
The article summarizes the main results of a systematic study on the preparation of
amorphous SiOx thin films with various contents (1.1≤ x≤ 1.7) by thermal evaporation of …
amorphous SiOx thin films with various contents (1.1≤ x≤ 1.7) by thermal evaporation of …