Atomic layer deposition (ALD) is an ultra-thin film deposition technique that has found many
applications owing to its distinct abilities. They include uniform deposition of conformal films …

Capacitors represent the largest obstacle to dynamic random-access memory (DRAM)
technology evolution because the capacitor properties govern the overall operational …

In the past decade, atomic layer deposition (ALD) has become an important thin film
deposition technique for applications in nanoelectronics, catalysis, and other areas due to its …

HfO2 thin films, extensively studied as high-k gate dielectric layers in metal-oxide-
semiconductor field effect transistors, have attracted interest of late due to their newly …

Dynamic random-access memory (DRAM) is the main memory in most current computers.
The excellent scalability of DRAM has significantly contributed to the development of …

Perovskites exhibit a wide range of remarkable material properties that have the potential to
advance various scientific fields. These properties originate in their unique structure and …

One field of organometallic and materials chemistry that has seen great advancements over
the last 20 years is that of atomic layer deposition (ALD), and in particular the development …

Phase transition of HfO 2 thin film has been investigated to demonstrate desirable electrical
properties, such as high dielectric constant or ferroelectricity, however, the most of results …

The growth behaviors and electrical performances of semiconducting ZnO, SnO2, and (Zn,
Sn) O x thin films, grown by atomic layer deposition (ALD) using O3 as the oxygen source …

In this study, we described an atomic layer deposition (ALD) process for the preparation of
nanoscale nickel oxide (NiO) films with high growth rate by using a combination of nickel (II) …