Integrated circuit (IC) industry has fully considered the fact that the Moore's Law is slowing
down or ending. Alternative solutions are highly and urgently desired to break the physical …

Owing to their wide direct bandgap tunability, III-nitride (III-N) compound semiconductors
have been proven instrumental in the development of blue light-emitting diodes that led to …

We demonstrate optically pumped blue lasing at room temperature in a merged moiré
photonic crystal fabricated out of gallium nitride with embedded, fragmented quantum wells …

Exploring the limits of spontaneous emission coupling is not only one of the central goals in
the development of nanolasers, it is also highly relevant regarding future large-scale …

We present a multi-microscopy study of dislocations in InGaN, whereby the same threading
dislocation was observed under several microscopes (atomic force microscopy, scanning …

In this work, we demonstrate ultra-low-threshold, optically pumped, room-temperature lasing
in GaN microdisk and micro-ring cavities containing InGaN quantum dots and fragmented …

We present a series of microdisk lasers realized within the same GaN-on-Si photonic
platform scheme, and operating at room temperature under pulsed optical pumping over a …

We fabricated a floating GaN microdisk supported by a silicon pillar through
photolithography, dry-etching GaN, and isotropic wet-etching silicon methods. Single-mode …

High-aspect-ratio GaN-based nanostructures are of interest for advanced photonic crystal
and core-shell devices. Nanostructures grown by a bottom-up approach are limited in terms …

A deterministic design method and experimental demonstration of single photonic crystal
nanocavity supporting both air and dielectric modes in the mid-infrared wavelength region …