In this article, we review recent progress on AlGaN/GaN and InAlN/GaN metal-insulator-
semiconductor high-electron-mobility transistors (MIS-HEMTs) using Al-based oxides, nitride …

In this paper, we present a systematic investigation of metal–organic chemical vapor
deposition-grown in situ SiN as the gate dielectric and surface passivation for AlGaN/GaN …

The paper deals with trap effects in InAlN/AlN/GaN and AlGaN/AlN/GaN high electron
mobility transistor structures using frequency dependent conductance and High-Low …

In this study, we successfully achieved flat cutoff frequency (f T) and maximum oscillation
frequency (f max) across a wide bias range on InP-based high-electron-mobility transistors …

We evaluated the effect of the post-metallization-annealing (PMA) process on drain current
stability of InAlN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS …

Wide energy gap semiconductors are broadly recognized as promising materials for novel
electronic and opto-electronic device applications. As informed device design requires a firm …

Frequency-dependent conductance measurements were carried out to investigate the trap
states in Al 2 O 3/AlInGaN/GaN metal-insulator-semiconductor (MIS) heterostructures. From …

We evaluated the DC characteristics of InAlN/GaN metal–oxide–semiconductor high-
electron-mobility transistors (MOS-HEMTs) using atomic-layer-deposited (ALD-) Al 2 O 3 by …

Herein, Al2O3/InAlGaN/GaN metal–insulator–semiconductor high‐electron‐mobility
transistors (MIS‐HEMTs) using H2O vapor pretreatment to decrease the amount of deficient …

Herein, we successfully improved the maximum oscillation frequency and maximum stable
gain (MSG) across a wide bias range of surface-oxide-controlled (SOC) InGaAs/InAlAs …