State of the art on gate insulation and surface passivation for GaN-based power HEMTs
T Hashizume, K Nishiguchi, S Kaneki, J Kuzmik… - Materials science in …, 2018 - Elsevier
In this article, we review recent progress on AlGaN/GaN and InAlN/GaN metal-insulator-
semiconductor high-electron-mobility transistors (MIS-HEMTs) using Al-based oxides, nitride …
semiconductor high-electron-mobility transistors (MIS-HEMTs) using Al-based oxides, nitride …
Investigation of In Situ SiN as Gate Dielectric and Surface Passivation for GaN MISHEMTs
In this paper, we present a systematic investigation of metal–organic chemical vapor
deposition-grown in situ SiN as the gate dielectric and surface passivation for AlGaN/GaN …
deposition-grown in situ SiN as the gate dielectric and surface passivation for AlGaN/GaN …
Trap states analysis in AlGaN/AlN/GaN and InAlN/AlN/GaN high electron mobility transistors
S Latrach, E Frayssinet, N Defrance, S Chenot… - Current Applied …, 2017 - Elsevier
The paper deals with trap effects in InAlN/AlN/GaN and AlGaN/AlN/GaN high electron
mobility transistor structures using frequency dependent conductance and High-Low …
mobility transistor structures using frequency dependent conductance and High-Low …
Improved f T/f max in wide bias range by steam-annealed ultrathin-Al2O3 gate dielectrics for InP-based high-electron-mobility transistors
S Ozaki, Y Kumazaki, N Okamoto, N Hara… - Applied Physics …, 2022 - iopscience.iop.org
In this study, we successfully achieved flat cutoff frequency (f T) and maximum oscillation
frequency (f max) across a wide bias range on InP-based high-electron-mobility transistors …
frequency (f max) across a wide bias range on InP-based high-electron-mobility transistors …
Improved DC performance and current stability of ultrathin-Al2O3/InAlN/GaN MOS-HEMTs with post-metallization-annealing process
S Ozaki, K Makiyama, T Ohki, N Okamoto… - Semiconductor …, 2020 - iopscience.iop.org
We evaluated the effect of the post-metallization-annealing (PMA) process on drain current
stability of InAlN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS …
stability of InAlN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS …
Electron transport within the wurtzite and zinc-blende phases of gallium nitride and indium nitride
P Siddiqua, SK O'Leary - Journal of Materials Science: Materials in …, 2018 - Springer
Wide energy gap semiconductors are broadly recognized as promising materials for novel
electronic and opto-electronic device applications. As informed device design requires a firm …
electronic and opto-electronic device applications. As informed device design requires a firm …
Trap state characterization of Al2O3/AlInGaN/GaN metal-insulator-semiconductor heterostructures
D Biswas, N Torii, H Fujita, T Yoshida… - Semiconductor …, 2019 - iopscience.iop.org
Frequency-dependent conductance measurements were carried out to investigate the trap
states in Al 2 O 3/AlInGaN/GaN metal-insulator-semiconductor (MIS) heterostructures. From …
states in Al 2 O 3/AlInGaN/GaN metal-insulator-semiconductor (MIS) heterostructures. From …
Effects of air annealing on DC characteristics of InAlN/GaN MOS high-electron-mobility transistors using atomic-layer-deposited Al2O3
S Ozaki, K Makiyama, T Ohki, N Okamoto… - Applied Physics …, 2017 - iopscience.iop.org
We evaluated the DC characteristics of InAlN/GaN metal–oxide–semiconductor high-
electron-mobility transistors (MOS-HEMTs) using atomic-layer-deposited (ALD-) Al 2 O 3 by …
electron-mobility transistors (MOS-HEMTs) using atomic-layer-deposited (ALD-) Al 2 O 3 by …
Surface‐Oxide‐Controlled InAlGaN/GaN High‐Electron‐Mobility Transistors Using Al2O3‐Based Insulated‐Gate Structures with H2O Vapor Pretreatment
S Ozaki, J Yaita, A Yamada, Y Minoura… - … status solidi (a), 2022 - Wiley Online Library
Herein, Al2O3/InAlGaN/GaN metal–insulator–semiconductor high‐electron‐mobility
transistors (MIS‐HEMTs) using H2O vapor pretreatment to decrease the amount of deficient …
transistors (MIS‐HEMTs) using H2O vapor pretreatment to decrease the amount of deficient …
Surface-oxide-controlled InGaAs/InAlAs inverted-type metal-oxide-semiconductor high electron mobility transistors for sub-THz high-power amplifiers
S Ozaki, Y Kumazaki, N Okamoto… - Japanese Journal of …, 2023 - iopscience.iop.org
Herein, we successfully improved the maximum oscillation frequency and maximum stable
gain (MSG) across a wide bias range of surface-oxide-controlled (SOC) InGaAs/InAlAs …
gain (MSG) across a wide bias range of surface-oxide-controlled (SOC) InGaAs/InAlAs …