Investigation of N+ SiGe juntionless vertical TFET with gate stack for gas sensing application
In this work, a novel N+ SiGe delta-doped gate stacked junctionless vertical tunnel field
transistor (N+ SiGe gate staked JL-VTFET) is proposed and investigated with its electrical …
transistor (N+ SiGe gate staked JL-VTFET) is proposed and investigated with its electrical …
Design and investigation of SiGe heterojunction based charge plasma vertical TFET for biosensing application
This paper explores the Vertical tunnel FET with the introduced layer of SiGe within the
channel/source junction using TCAD. As Tunnel FETs smothered the 60 mV/decade …
channel/source junction using TCAD. As Tunnel FETs smothered the 60 mV/decade …
Design and simulation-based analysis of triple metal gate with ferroelectric-SiGe heterojunction based vertical TFET for Performance Enhancement
In this work, a triple metal gate-ferroelectric material-with SiGe heterojunction based vertical
structure of Tunnel field effect transistor (TMG-FE-SiGe-VTFET) is proposed and …
structure of Tunnel field effect transistor (TMG-FE-SiGe-VTFET) is proposed and …
Design and analysis of triple metal vertical TFET gate stacked with N-Type SiGe delta-doped layer
This work deals with the novel characterization of n+ SiGe δ-doped layer with the
combination of gate stacking method in Vertical TFET device by using TCAD simulation tool …
combination of gate stacking method in Vertical TFET device by using TCAD simulation tool …
Comparative analysis of Change plasma and Junctionless Ferroelectric tunneling junction of VTFET for improved performance
S Singh - Silicon, 2023 - Springer
The effect of ferroelectric material at tunneling junction is compared for the two different
configuration of Charge plasma and Junctionless of Vertical TFET structure. Various …
configuration of Charge plasma and Junctionless of Vertical TFET structure. Various …
Design and Comparative Analysis of Gate Stack Silicon Doped HfO2 Ferroelectric Vertical TFET
In this work, a gate stack Silicon doped HfO2 ferroelectric vertical TFET is proposed and its
various performance parameters are investigated and compared with the high-K HfO2 …
various performance parameters are investigated and compared with the high-K HfO2 …
Simulation and performance evaluation of charge plasma based dual pocket biosensor using SiGe-heterojunction TFET design
R Paul - Silicon, 2023 - Springer
Conventional biosensor designs are often vulnerable to issues like random dopant
fluctuations (RDFs) and high thermal budgets due to their design and the device they are …
fluctuations (RDFs) and high thermal budgets due to their design and the device they are …
Improvements in Reliability and RF Performance of Stacked Gate JLTFET Using p+ Pocket and Heterostructure Material
In this paper, a new p+ pocket heterostructure stacked gate junction-less tunneling field
effect transistor (JLTFET) is proposed. The simulation results indicate that, the proposed …
effect transistor (JLTFET) is proposed. The simulation results indicate that, the proposed …
Design and parametric analysis of GaN on silicon high electron mobility transistor for RF performance enhancement
The need of performance enhancement at the RF and millimeter wave is highly desirable to
eliminate the heating effects and power dissipation. Silicon substarte found to be a suitable …
eliminate the heating effects and power dissipation. Silicon substarte found to be a suitable …
Vertical T-shaped heterojunction tunnel field-effect transistor for low power security systems
The tunnel FET may be a versatile device to replace MOSFET in low-power, high-
performance designs. This chapter explores the vertical TFET with the introduced layer of …
performance designs. This chapter explores the vertical TFET with the introduced layer of …