Phase transitions can occur in certain materials such as transition metal oxides (TMOs) and
chalcogenides when there is a change in external conditions such as temperature and …

This paper reviews recent developments in the sputter growth of chalcogenide thin films for
phase-change memory applications. We focus primarily on the growth of highly oriented Sb …

Topological insulators have shown great potential for future optoelectronic technology due
to their extraordinary optical and electrical properties. Photodetectors, as one of the most …

Properly selecting electrode materials for antimony telluride (Sb2Te3) thermoelectric (TE)
thin film enhances the power factor. This study analyzed the compositional variation and …

Thermal stability and operation speed are two key challenges in phase change memory
(PCM). This work reports GeTe/Cr 0.16 Sb 2 Te (GT/CrST) superlattice-like (SLL) films for …

Bi2Te3-based alloys are known to have outstanding thermoelectric properties. Although
structure-property relations have been studied, still, detailed analysis of the atomic and nano …

Fe (Se, Te) films of different thicknesses were deposited on metal tapes by pulsed laser
deposition at different substrate temperatures. It is found that the substrate temperature …

Iron chalcogenide Fe (Se, Te) films with thicknesses of 150 nm were deposited on CeO 2-
buffered metal tapes via pulsed laser deposition using various laser fluences. The film …

Sb 2 Te 3 is a promising candidate for applications in thermoelectric thin film devices, thin
film solar cells, and electronic memory devices. This study involved the preparation of Sb x …

Phase-change memory (PCM) using chalcogenide films composed of Ge–Sb–Te alloys is
the only commercially available nonvolatile memory for storage class memory. Recently …