Investigation of Low-Frequency Noise in Silicon Nanowire MOSFETs
J Zhuge, R Wang, R Huang, Y Tian… - IEEE Electron …, 2008 - ieeexplore.ieee.org
Low-frequency noise (LFN) in n-type silicon nanowire MOSFETs (SNWTs) is investigated in
this letter. The drain-current spectral density exhibits significant dispersion of up to five …
this letter. The drain-current spectral density exhibits significant dispersion of up to five …
Low-frequency noise characteristics in SONOS flash memory with vertically stacked nanowire FETs
Low-frequency (LF) noise in a vertically stacked nanowire (VS-NW) memory device, which is
based on the silicon-oxide-nitride-oxide-silicon (SONOS) configuration is characterized in …
based on the silicon-oxide-nitride-oxide-silicon (SONOS) configuration is characterized in …
Effects of various bias and temperature stresses on low-frequency noise properties of amorphous InGaZnO thin-film transistors
HJ Kim, CY Jeong, SD Bae, HI Kwon - Journal of Vacuum Science & …, 2017 - pubs.aip.org
The authors investigate the low-frequency noise (LFN) properties of amorphous indium-
gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) under various bias and temperature …
gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) under various bias and temperature …
Electrical stress degradation of small-grain polysilicon thin-film transistors
This paper is focused on the stability of n-channel laser-crystallized polysilicon thin-film
transistors (TFTs) submitted to a hydrogenation process during the fabrication and with small …
transistors (TFTs) submitted to a hydrogenation process during the fabrication and with small …
Off-State Current Degradation Behavior of Polycrystalline Silicon Thin-Film Transistors under Dynamic Drain Voltage Stress
In this work, the off-state current (I off) degradation behavior of polycrystalline silicon (poly-
Si) thin-film transistors (TFTs) under dynamic drain voltage stress is investigated for the first …
Si) thin-film transistors (TFTs) under dynamic drain voltage stress is investigated for the first …
Noise Characterization of n- and p-Type Polycrystalline-Silicon Thin-Film Transistors
M Behravan, DT Story - IEEE Transactions on Device and …, 2009 - ieeexplore.ieee.org
This paper presents a study of low-frequency-noise properties of n-and p-type
polycrystalline-silicon (poly-Si) thin-film transistors (TFTs). The 1/f noise behavior of these …
polycrystalline-silicon (poly-Si) thin-film transistors (TFTs). The 1/f noise behavior of these …
Analytical Drain Current Model for Poly-Si Thin-Film Transistors Biased in Strong Inversion Considering Degradation of Tail States at Grain Boundary
LL Wang, JB Kuo, S Zhang - IEEE transactions on electron …, 2013 - ieeexplore.ieee.org
This paper presents an analytical hot-carrier effect model for n-channel poly-Si thin-film
transistors biased in strong inversion based on degradation of tail states at grain boundary …
transistors biased in strong inversion based on degradation of tail states at grain boundary …
Modeling hot-carrier-induced reliability of poly-silicon thin film transistors
LL Wang, JB Kuo, S Zhang - 2012 IEEE International …, 2012 - ieeexplore.ieee.org
This paper reports modeling the hot-carrier-induced reliability of poly-silicon thin film
transistors (poly-Si TFT). In the damage region near the drain of the poly-Si TFT, using the …
transistors (poly-Si TFT). In the damage region near the drain of the poly-Si TFT, using the …
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Π Στοιχεία - 2022 - users.ntua.gr
* The paper has been selected for the May 2009 issue of Virtual Journal of Ultrafast Science.
The Virtual Journal, which is published by the American Physical Society and the American …
The Virtual Journal, which is published by the American Physical Society and the American …