This letter develops a reliable, integrated binary synapse and neuron model for hardware
implementation of binary neural networks. Thanks to the nonvolatile nature of magnetic …

With the rapid development of the Internet of Things and artificial intelligence, it is more and
more difficult for the existing hardware structure to process billions of data. In conventional …

This brief deals with the impact of spin-transfer torque magnetic random access memory
(STT-MRAM) cell based on double-barrier magnetic tunnel junction (DMTJ) on the …

Neural networks have shown a high ability to model and solve complex problems. Hardware
implementation of the neural network can also increase the efficiency of this system and, in …

Spin transfer torque (STT) based magnetic tunnel junction (MTJ) device is a commercially
appealing option for non-volatile latches and flip-flops. In this brief, an STT-MTJ based non …

This paper introduces SIMPLY+, an advanced Spin-Transfer Torque Magnetic Random-
Access Memory (STT-MRAM)-based Logic-in-Memory (LIM) architecture that evolves from …

Spin transfer torque magnetic random access memory (STT-MRAM) offers a promising
solution for low-power and high-density memory due to its compatibility with CMOS, higher …

This paper explores performance of non-volatile ternary content addressable memories (NV-
TCAMs), exploiting double-barrier magnetic tunnel junction (DMTJ) as comparatively …

As technology size scales down, magnetic tunnel junctions (MTJs) as a promising
technology are becoming more and more sensitive to process variation, especially in oxide …

While the von Neumann architectures involve separate processing and memory units, the
movement of data between them results in considerable time and energy expenses. One …