Since the continuous scaling down of the transistor channel length, extraordinary
improvement is achieved in the switching speed. However, the rising leakage current …

According to quantum transport simulations, source-to-drain tunneling (SDT) has been
recognized as the main cause leading to subthreshold swing (SS) saturation and …

In this work we discuss limitations of the split-CV method when it is used for extracting carrier
mobilities in devices with thin silicon channels like FinFETs, ultra thin body silicon-on …

Controlling electron tunneling is of fundamental importance in the design and operation of
semiconductor nanostructures such as field effect transistors (FETs) and quantum computing …

We present the theory and the application of a first-principle transport model employing a
basis set obtained directly from the ab initio Bloch functions. We use a plane-wave density …

This paper examines the impact of band structure on deeply scaled III-V devices by using a
self-consistent 20-band-SO semiempirical atomistic tight-binding model. The density of …

As metal-oxide-semiconductor field-effect transistors (MOSFETs) channel lengths (Lg) are
scaled to lengths shorter than Lg<; 8 nm source-drain tunneling starts to become a major …

This paper examines the validity of the widely used parabolic effective mass approximation
by computing the ballistic injection velocity of a double-gate, ultrathin-body (UTB) n …

Carrier selective solar cell has become one of the hot spots in the area of Si solar cell. The
proposed architecture FTO/TiO 2/c-Si/ia-Si: H/Cu 2 O/back contact studied through …

This paper presents the theory, implementation, and application of a quantum transport
modeling approach based on the nonequilibrium Green's function formalism and a full-band …