Recent years have witnessed GaN-based devices delivering their promise of
unprecedented power and frequency levels and demonstrating their capability as an able …

Insulated-gate GaN-based transistors can fulfill the emerging demands for the future
generation of highly efficient electronics for high-frequency, high-power and high …

Controlling surface/interface states in GaN-based transistors: Surface model, insulated gate,
and surface passivation | Journal of Applied Physics | AIP Publishing Skip to Main Content …

Interface trapping is one of the most notorious effects that limit device performance in GaN-
based MIS high electron mobility transistors (MISHEMTs). In this paper, we present a …

This paper presents a systematic characterization of electronic states at insulators/(Al) GaN
interfaces, particularly focusing on insulator/AlGaN/GaN structures. First, we review …

The frequency dependent capacitance-voltage (C–V) and conductance-voltage (G/ω–V)
characteristics of Au/bio-organic/n-GaN Schottky barrier diodes (SBDs) based on DNA …

The effect of neutron irradiation on the electrical performance of the-Ga2O3 Schottky barrier
diode (SBD) device has been studied in this work. After equivalent 1 MeV neutron irradiation …

AlN/AlGaN/GaN metal-insulator-semiconductor (MIS) structure is analyzed by using
capacitance-frequency-temperature (CfT) mapping. Applying sputtering-deposited AlN, we …

Al 2 O 3 deposited by atomic layer deposition (ALD) was used as an insulator in metal–
insulator–semiconductor (MIS) structures for GaN-based MIS-devices. As the oxygen …

In this letter, slow and fast trap states in metal-oxide-semiconductor (MOS) capacitors
fabricated on recessed AlGaN/GaN heterostructures were studied by frequency dependent …