Physics of defects in metal halide perovskites

C Bao, F Gao - Reports on Progress in Physics, 2022 - iopscience.iop.org
Metal halide perovskites are widely used in optoelectronic devices, including solar cells,
photodetectors, and light-emitting diodes. Defects in this class of low-temperature solution …

Trap center study in hybrid organic-inorganic perovskite using thermally stimulated current (TSC) analysis

G Gordillo, CA Otálora, MA Reinoso - Journal of Applied Physics, 2017 - pubs.aip.org
This paper presents results of a study that allowed identifying states of traps in thin films of
hybrid organic-inorganic perovskite compounds based on methylammonium lead halide …

Trap and recombination centers study in sprayed Cu2ZnSnS4 thin films

M Courel, O Vigil-Galán, D Jiménez-Olarte… - Journal of Applied …, 2014 - pubs.aip.org
In this work, a study of trap and recombination center properties in polycrystalline Cu 2
ZnSnS 4 thin films is carried out in order to understand the poor performance in Cu 2 ZnSnS …

Investigation of trapping levels in p-type Zn3P2 nanowires using transport and optical properties

GA Lombardi, FM de Oliveira, MD Teodoro… - Applied Physics …, 2018 - pubs.aip.org
Here, we report the synthesis and structural characterization of high-quality Zn 3 P 2
nanowires via chemical vapour deposition. Structural and morphological characterization …

Direct evidence of traps controlling the carriers transport in SnO2 nanobelts

OM Berengue, AJ Chiquito - Journal of Semiconductors, 2017 - iopscience.iop.org
This work reports on direct evidence of localized states in undoped SnO 2 nanobelts. Effects
of disorder and electron localization were observed in Schottky barrier dependence on the …

Thermally stimulated current measurements in as-grown TlGaSeS layered single crystals

T Yıldırım, NM Gasanly - Current Applied Physics, 2009 - Elsevier
Charge carrier traps in as-grown TlGaSeS layered single crystals were studied using
thermally stimulated current measurements. The investigations were performed in …

[PDF][PDF] Thermally Stimulated Current Study of Shallow Traps in As-Grown Chain Crystals

N Gasanly, T Yildirim - Acta Physica Polonica A, 2011 - bibliotekanauki.pl
Thermally stimulated current measurements were carried out on as-grown TlInSe_2 single
crystals. The investigations were performed in temperatures ranging from 10 to 260 K with …

Determination of deep trapping center parameters in as-grown Tl2Ga2S3Se layered crystals

T Yıldırım, NM Gasanly - Solid state sciences, 2009 - Elsevier
Thermally stimulated current measurements were carried out on as-grown Tl2Ga2S3Se
layered single crystals. The investigations were performed in temperatures ranging from 10 …

Determination of trapping center parameters in Tl2In2S3Se layered single crystals by thermally stimulated current measurements

I Guler, NM Gasanly - Physica B: Condensed Matter, 2009 - Elsevier
As-grown Tl2In2S3Se layered single crystals were studied by thermally stimulated current
measurements in the temperature range of 10–170K with different heating rates …

Synthesis and electrical characterization of Zn3P2 nanowires

H Kamimura, RC Gouveia… - Semiconductor …, 2013 - iopscience.iop.org
Single crystalline Zn 3 P 2 nanowires were synthesized on Si substrates via vapour phase
deposition catalysed by In–Au seeds. Single nanowire devices were fabricated and the …