Enhanced performance of a Mg 2 Si/Si heterojunction photodetector grown with the assistance of nanostructures

H Yu, J Gou, Y Zhang, X Yang, G Zhang… - Journal of Materials …, 2025 - pubs.rsc.org
As a non-toxic and non-polluting semiconductor material, Mg2Si/Si has great potential for
application in the field of visible and near-infrared photo detection due to its excellent …

Electrical Properties of (110)-Oriented Nondoped Mg2Si Films with p-Type Conduction Prepared by RF Magnetron Sputtering Method

S Ogawa, A Katagiri, T Shimizu, M Matsushima… - Journal of electronic …, 2014 - Springer
Abstract Magnesium silicide (Mg 2 Si) thick films with (110) orientation were fabricated on
(001) sapphire substrate using radiofrequency magnetron sputtering. Stoichiometric Mg 2 Si …

Study of Mg2Si Thin Film and Ultra-Thin Film Formation for Thermoelectric Applications

B Zouak, R Zirmi, MS Belkaid, M Pasquinelli - Journal of electronic …, 2019 - Springer
Mg 2 Si thin and ultra-thin films are grown on silicon (Si) substrates by performing heat
treatments of Magnesium (Mg) layers deposited on Si (100), using radio frequency (RF) …

Investigation of Mg2 (Si, Sn) thin films for integrated thermoelectric devices

C Prahoveanu, A Lacoste, S Béchu, C de Vaulx… - Journal of Alloys and …, 2015 - Elsevier
The ongoing miniaturization of thermoelectric (TE) modules requires scaling down to thin
films of TE materials with high efficiency. Moreover, thin film-based integrated devices …

Epitaxial growth of Mg2Si films on strontium titanate single crystals

K Akiyama, A Katagiri, S Ogawa… - … status solidi (c), 2013 - Wiley Online Library
and (111)‐oriented Mg2Si films were grown at 325° C on (100) and (110), and (111) SrTiO3
substrates, respectively, by RF magnetron sputtering method. X‐ray pole figure …

Structural characterization of epitaxial Mg2Si films grown on MgO and MgO-buffered Al2O3 substrates

A Katagiri, S Ogawa, T Oikawa… - Japanese Journal of …, 2015 - iopscience.iop.org
oriented epitaxial Mg 2 Si films were grown on (100),(110), and (111) MgO single crystals by
RF magnetron sputtering. Two, one, and three types of in-plane variants were observed for …

In situ high-temperature X-ray diffraction analysis of Mg2Si formation kinetics via reaction of Mg films with Si single crystal substrates

AS Gordin, KH Sandhage - Intermetallics, 2018 - Elsevier
Abstract Conformal compact Mg 2 Si films can be formed on Si substrates (for battery,
photovoltaic, thermoelectric, or other applications) via the direct reaction of Mg films with …

Preparation of micro-porous Si particles from Mg2Si powder

T Yamada, H Itahara, H Yamane - Materials Letters, 2013 - Elsevier
Polycrystalline Si powder consisting of micro-porous particles was prepared by heating
Mg2Si powder at 600° C for 40h under a pressure of 500Pa. The porous Si particles were …

Solid‐phase growth of Mg2Si by annealing in inert gas atmosphere

T Ikehata, T Ando, T Yamamoto, Y Takagi… - … status solidi (c), 2013 - Wiley Online Library
Abstract Magnesium silicide (Mg2Si) is an attractive semiconductor material for application
to thermo‐electric conversion devices because it consists of non‐toxic and resource …

Growth and Characterization of Thermoelectric Mg2Si Thin Films

TC Hasapis, EC Stefanaki, A Siozios… - MRS Online …, 2011 - cambridge.org
In this work, room temperature co-deposition of Mg and Si was used to successfully fabricate
Mg2Si thin films on Si substrate by dual cathode magnetron sputtering (DCMS). Films were …