Modeling and simulation of ultrahigh sensitive AlGaN/AlN/GaN HEMT-based hydrogen gas detector with low detection limit
A Varghese, A Eblabla, K Elgaid - IEEE Sensors Journal, 2021 - ieeexplore.ieee.org
Presented through this work is a steady state analytical model of the GaN HEMT based gas
detector. GaN with high chemical and thermal stability provides promises for detectors in …
detector. GaN with high chemical and thermal stability provides promises for detectors in …
A Review of GaN Channel-Based MOSHEMTs for Next-Generation Medium/Low-Voltage Rating and High-Speed RF Power Applications
G Deshpande, S Bhattacharya, J Ajayan… - Journal of Electronic …, 2024 - Springer
This comprehensive review delves into the intricate realm of GaN-based metal–oxide–
semiconductor (MOS) high-electron-mobility transistors (HEMTs), providing an exhaustive …
semiconductor (MOS) high-electron-mobility transistors (HEMTs), providing an exhaustive …
Sensitivity analysis of Al0. 3Ga0. 7N/GaN dielectric modulated MOSHEMT biosensor
Emerging and newly proposed devices integrate various materials at different scales (from
nano to submicron), which reveals sensor response. Prefab simulation is in great demand to …
nano to submicron), which reveals sensor response. Prefab simulation is in great demand to …
Optimizing Bio-sensor Design with Support Vector Regression Technique for AlGaN/GaN MOSHEMT
This letter introduces a novel approach using support vector regression (SVR) for sensitivity
modeling of gallium nitride (GaN) metal oxide semiconductor (MOS)–high electron mobility …
modeling of gallium nitride (GaN) metal oxide semiconductor (MOS)–high electron mobility …
Device optimization and sensitivity analysis of a double-cavity graded MgZnO/ZnO MOSHEMT for biomolecule detection
The detailed analytical model of biosensing parameters was proposed for a double-cavity
graded MgZnO/ZnO metal oxide semiconductor high electron mobility transistor …
graded MgZnO/ZnO metal oxide semiconductor high electron mobility transistor …
Design of a single gate metal oxide semiconductor high electron mobility transistor with a cavity under the gate
A Dastidar, TK Patra - 2021 IEEE International Women in …, 2021 - ieeexplore.ieee.org
This paper presents the impact of dielectric modulation on characteristics for an AlGaN/GaN
heterostructure using 2D Visual TCAD simulation. The paper presents the simulation of a …
heterostructure using 2D Visual TCAD simulation. The paper presents the simulation of a …
Investigation of multiple-mesa-nanochannel array GaN-based MOSHEMTs with Al2O3 gate dielectric layer
In this work, an atomic layer deposition system was used to deposit Al 2 O 3 high-k dielectric
film as the gate insulator of GaN-based metal-oxide-semiconductor high-electron mobility …
film as the gate insulator of GaN-based metal-oxide-semiconductor high-electron mobility …